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Datasheet 21N05L Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 21N05L | SPU21N05L SPD21N05L SPU21N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature
Pin 1 G
Pin 2 D
Pin 3 S
Type SPD21N05L SPU21N05L
VDS 55 V 55 V
ID 20 A 20 A
RDS(on)
0.07 Ω 0.07 Ω
Maximum Ratings
Parame |  Siemens | data |
| 2 | 21N05L | SPD21N05L SPD 21N05L
SIPMOS® Power Transistor
Features • N channel • Enhancement mode • Avalanche rated
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
• Logic Level
• dv/dt rated
• 175˚C operating temperature
VDS RDS(on) ID
55 0.04 20
V � |  Infineon | data |
21N Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 21N05L | SPU21N05L SPD21N05L SPU21N05L
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/dt rated • 175°C operating temperature
Pin 1 G
Pin 2 D
Pin 3 S
Type SPD21N05L SPU21N05L
VDS 55 V 55 V
ID 20 A 20 A
RDS(on)
0.07 Ω 0.07 Ω
Maximum Ratings
Parame Siemens data | | |
| 2 | 21N05L | SPD21N05L SPD 21N05L
SIPMOS® Power Transistor
Features • N channel • Enhancement mode • Avalanche rated
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
• Logic Level
• dv/dt rated
• 175˚C operating temperature
VDS RDS(on) ID
55 0.04 20
V � Infineon data | | |
| 3 | 21N50C3 | SPB21N50C3 SPB21N50C3 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
VDS @ Tjmax RDS(on) ID
560 0.19 21
PG-TO263
V Ω A
Type Infineon data | | |
| 4 | 21N60 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
21N60
·FEATURES ·Drain Current ID= 21A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.32Ω(Max) ·Fast Switching
·APPLICATIONS ·Switch mode power supply.
·  Inchange Semiconductor mosfet | | |
| 5 | 21N60 | IXFH21N60 IXYS Corporation data | | |
| 6 | 21NAB06 | 3-phase bridge rectifier braking chopper 3-phase bridge inverter SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I Absolute Maximum Ratings
Symbol Conditions 1) Values 1200 ± 20 23 / 15 46 / 30 24 / 17 48 / 34 1500 25 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Inverter & Chopper VCES VGES IC Theatsink = 25 / 80 °C tp < 1 ms; The  SEMIKRON rectifier | | |
| 7 | 21NAB12 | 3-phase bridge rectifier braking chopper 3-phase bridge inverter SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I Absolute Maximum Ratings
Symbol Conditions 1) Values 1200 ± 20 23 / 15 46 / 30 24 / 17 48 / 34 1500 25 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Inverter & Chopper VCES VGES IC Theatsink = 25 / 80 °C tp < 1 ms; The SEMIKRON rectifier | |
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