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What is STL24N60M2?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


STL24N60M2 Datasheet PDF - STMicroelectronics

Part Number STL24N60M2
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STL24N60M2
N-channel 600 V, 0.186 Ω typ., 18 A MDmesh II Plus™ low Qg
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet production data
Features
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Figure 1. Internal schematic diagram
D(3)
G(1)
S(2)
AM01476v1
Order code VDS @ TJmax RDS(on) max ID
STL24N60M2
650 V
0.21 Ω 18 A
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener protected
Applications
Switching applications
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Order code
STL24N60M2
Table 1. Device summary
Marking
Package
24N60M2
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
February 2014
This is information on a product in full production.
DocID024777 Rev 2
1/15
www.st.com
15

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STL24N60M2 equivalent
STL24N60M2
Electrical characteristics
Symbol
Table 7. Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 9 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Min. Typ. Max. Unit
- 14 - ns
- 9 - ns
- 60 - ns
- 15 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
ISD Source-drain current
(1),(2)
ISDM
Source-drain current (pulsed)
(3)
VSD Forward on voltage
ISD = 18 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 16)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/μs
VDD = 60 V, Tj = 150 °C
(see Figure 16)
1. The value is rated according to Rthj-case and limited by package.
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
- 18 A
- 72 A
- 1.6 V
- 332
ns
-4
μC
- 24
A
- 450
ns
- 5.5
μC
- 25
A
DocID024777 Rev 2
5/15


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STL24N60M2 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
STL24N60M2The function is N-channel Power MOSFET. STMicroelectronicsSTMicroelectronics

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