DataSheet.es    


Datasheet IRLU120 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1IRLU120(IRLR120 / IRLU120) HEXFET Power MOSFET

International Rectifier
International Rectifier
mosfet
2IRLU120Power MOSFET, Transistor

www.vishay.com IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 5.0 V 12 3.0 7.1 Single 0.27 D DPAK (TO-252) D IPAK (TO-251) D G GS GD S S N-Channel MOSFET FEATURES • Dyna
Vishay
Vishay
mosfet
3IRLU120NPower MOSFET, Transistor

l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This b
International Rectifier
International Rectifier
mosfet
4IRLU120NPBFPower MOSFET, Transistor

IRLR120NPbF IRLU120NPbF l Surface Mount (IRLR120N) l Straight Lead (IRLU120N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on
International Rectifier
International Rectifier
mosfet
5IRLU120PBFPower MOSFET, Transistor

PD- 95382A IRLR120PbF IRLU120PbF • Lead-Free www.irf.com 1 12/07/04 IRLR/U120PbF 2 www.irf.com IRLR/U120PbF www.irf.com 3 IRLR/U120PbF 4 www.irf.com IRLR/U120PbF www.irf.com 5 IRLR/U120PbF 6 www.irf.com IRLR/U120PbF www.irf.com 7 IRLR/U120PbF D-Pak (TO-252AA) Package Outline
International Rectifier
International Rectifier
mosfet


IRL Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1IRL1004HEXFET Power MOSFET

PD - 91702B IRL1004 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 40V RDS(on) = 0.0065Ω G ID = 130A
International Rectifier
International Rectifier
mosfet
2IRL1004LHEXFET Power MOSFET

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065�
International Rectifier
International Rectifier
mosfet
3IRL1004LPBF(IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET

PD - 95575 Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRL1004SPbF IRL1004LPbF HEXFET® Power MOSFET D VDSS = 40V G S R
International Rectifier
International Rectifier
mosfet
4IRL1004PBFPower MOSFET, Transistor

l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing tec
International Rectifier
International Rectifier
mosfet
5IRL1004SHEXFET Power MOSFET

PD - 91644A IRL1004S IRL1004L Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l HEXFET® Power MOSFET D VDSS = 40V G S RDS(on) = 0.0065�
International Rectifier
International Rectifier
mosfet
6IRL1004SPBF(IRL1004SPBF / IRL1004LPBF) HEXFET Power MOSFET

PD - 95575 Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l IRL1004SPbF IRL1004LPbF HEXFET® Power MOSFET D VDSS = 40V G S R
International Rectifier
International Rectifier
mosfet
7IRL1104HEXFET Power MOSFET

PD -91805 IRL1104 HEXFET® Power MOSFET Logic-Level Gate Drive q Advanced Process Technology q Ultra Low On-Resistance q Dynamic dv/dt Rating q 175°C Operating Temperature q Fast Switching q Fully Avalanche Rated Description q D VDSS = 40V G S RDS(on) = 0.008Ω ID = 104A…
International Rectifier
International Rectifier
mosfet



Esta página es del resultado de búsqueda del IRLU120. Si pulsa el resultado de búsqueda de IRLU120 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.


nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap