|
|
Datasheet RCX510N25 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | RCX510N25 | SILICON N-CHANNEL MOS FET PRODUCTS TO-220FM
TYPE
RCX510N25
PAGE 1/4
1.TYPE
RCX510N25
2.STRUCTURE
SILICON N-CHANNEL MOS FET
3.APPLICATIONS SWITCHING
4.ABSOLUTE MAXIMUM RATINGS [Ta=25℃]
DRAIN-SOURCE VOLTAGE
VDSS ・・・ 250V
GATE-SOURCE VOLTAGE
VGSS ・・・ ±30V
DRAIN CURRENT
CONTINUOUS PULSED
ID IDP
SO |  ROHM Semiconductor | data |
RCX Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RCX050N25 | 10V Drive Nch MOSFET RCX050N25
Data Sheet
10V Drive Nch MOSFET
RCX050N25
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD.
Application Switching
Dimensions (Unit : mm)
TO-220FM
10.0 φ3.2
4.5 2.8
15.0 12.0
2.5 8.0
14.0
1.2 1.3
0.8
2.54 2.54 ROHM Semiconductor mosfet | | |
| 2 | RCX080N25 | Nch 250V 8A Power MOSFET RCX080N25
Nch 250V 8A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
250V 600mW
8A 35W
lFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication Switchi ROHM Semiconductor mosfet | | |
| 3 | RCX100N25 | Nch 250V 10A Power MOSFET RCX100N25
Nch 250V 10A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
250V 320mW
10A 40W
lFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication Switc ROHM Semiconductor mosfet | | |
| 4 | RCX120N25 | Nch 250V 12A Power MOSFET RCX120N25
Nch 250V 12A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
250V 235mW
12A 40W
lFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication Switc ROHM Semiconductor mosfet | | |
| 5 | RCX200N20 | N-chnannel 200V 20A Power MOSFET RCX200N20
Nch 200V 20A Power MOSFET
lOutline
Datasheet
VDSS RDS(on) (Max.) ID PD
lFeatures 1) Low on-resistance. 2) Fast switching speed.
200V 130mW 20A 40W
TO-220FM
(1) (2)
(3)
lInner circuit
3) Drive circuits can be simple. 4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant ROHM Semiconductor mosfet | | |
| 6 | RCX330N25 | Nch 250V 33A Power MOSFET RCX330N25
Nch 250V 33A Power MOSFET
Datasheet
VDSS RDS(on) (Max.)
ID PD
250V 105mW
33A 40W
lFeatures 1) Low on-resistance.
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
lApplication Switc ROHM Semiconductor mosfet | | |
| 7 | RCX510N25 | SILICON N-CHANNEL MOS FET PRODUCTS TO-220FM
TYPE
RCX510N25
PAGE 1/4
1.TYPE
RCX510N25
2.STRUCTURE
SILICON N-CHANNEL MOS FET
3.APPLICATIONS SWITCHING
4.ABSOLUTE MAXIMUM RATINGS [Ta=25℃]
DRAIN-SOURCE VOLTAGE
VDSS ・・・ 250V
GATE-SOURCE VOLTAGE
VGSS ・・・ ±30V
DRAIN CURRENT
CONTINUOUS PULSED
ID IDP
SO ROHM Semiconductor data | |
| Esta página es del resultado de búsqueda del RCX510N25. Si pulsa el resultado de búsqueda de RCX510N25 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |