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PDF UM6J1N Data sheet ( Hoja de datos )
| Número de pieza | UM6J1N | |
| Descripción | 4V Drive Pch MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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4V Drive Pch MOSFET
UM6J1N
zStructure
Silicon P-channel MOSFET
zFeatures
1) Two RSU002P03 transistors in a single UMT package.
2) The MOSFET elements are independent, eliminating
mutual interference.
3) Mounting cost and area can be cut in half.
zApplications
Switching
zDimensions (Unit : mm)
UMT6
SOT-363
2.0
1.3
0.65
0.65
(5)
(6) (4)
0.9
0.7
1pin mark
(1) (3)
(2)
0.2
0.15
Each lead has same dimensions
Abbreviated symbol : J01
zPackaging specifications
Type
UM6J1N
Package
Code
Basic ordering unit (pieces)
Taping
TN
3000
zInner circuit
(6) (5)
(4)
∗1
∗2
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(3)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for Tr1 and Tr2.>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
Total power dissipation
PD ∗2
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
Tch
Tstg
Limits
−30
±20
±0.2
±0.4
150
120
150
−55 to +150
Unit
V
V
A
A
mW / TOTAL
mW / ELEMENT
°C
°C
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Symbol
Rth(ch-a) ∗
Limits
833
1042
Unit
°C/W / TOTAL
°C/W / ELEMENT
www.rohm.com
○c 2009 ROHM Co., Ltd. All rights reserved.
1/3
2009.04 - Rev.A
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet UM6J1N.PDF ] | |
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