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Número de pieza | HY1707PS | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | HOOYI | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HY1707PS (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
No Preview Available ! HY1707P/M/B/I/MF/PS/PM
Features
• 70V/80A,
RDS(ON)= 6mΩ (typ.) @ VGS=10V
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
N-Channel Enhancement Mode MOSFET
Pin Description
DS
G
TO-220FB-3L
DS
G
TO-220FB-3S
DS
G
TO-263-2L
DS
G
TO-262-3L
Applications
• Power Management for Inverter Systems.
DS
G
TO-220MF-3L
DS
G
TO-3PS-3L
D
DS
G
TO-3PS-3M
G N-Channel MOSFET
Ordering and Marking Information
S
P MB I
HY1707 HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
MF PS PM
HY1707 HY1707 HY1707
YYÿ XXXJWW G YYÿ XXXJWW G YYÿ XXXJWW G
Package Code
P : TO-220FB-3L
B: TO-263-2L
MF: TO-220MF-3L
PM: TO-3PS-3M
Date Code
YYXXX WW
M : TO-220FB-3S
I : TO-262-3L
PS: TO-3PS-3L
Assembly Material
G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.hooyi.cc
151015
1 page HY1707P/M/B/I/MF/PS/PM
Typical Operating Characteristics (Cont.)
Output Characteristics
160
V = 7,8,9,10V
GS
140
120 6V
100
80 5.5V
60
40 5V
20 4.5V
4V
0
012345
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
8.5
8.0
7.5
7.0
V =10V
GS
6.5
6.0
5.5
5.0
4.5
0 20 40 60 80 100
ID - Drain Current (A)
Drain-Source On Resistance
11
I =40A
DS
10
9
8
7
6
5
4
4 5 6 7 8 9 10
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.8
I
DS
=250µA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25 0 25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
5 www.hooyi.cc
5 Page HY1707P/M/B/I/MF/PS/PM
TO-262-3L
MM INCH
SYMBOL
MIN NOM MAX MIN NOM MAX
A 4.45 4.57 4.70 0.175 0.180 0.185
A1 1.22 1.27 1.32 0.048 0.050 0.052
A2 2.29 2.67 2.92 0.090 0.105 0.115
b 0.71 0.813 0.97 0.028 0.032 0.038
b2 1.22 1.270 1.40 0.048 0.050 0.055
c 0.38 0.381 0.76 0.015 0.015 0.030
D 23.20 23.61 24.02 0.913 0.930 0.946
D1 8.38 8.70 8.89 0.330 0.343 0.350
E1 10.03 10.16 10.54 0.395 0.400 0.415
e 2.54 BSC
0.100 BSC
H2 -
- 1.31
-
- 0.052
L 13.34 13.73 14.10 0.525 0.541 0.555
L1 3.30 3.56 4.06 0.130 0.140 0.160
L2 10.77 REF
0.424 REF
L3 3.40 REF
0.134 REF
P1 1.07 1.20 1.32 0.042 0.047 0.052
θ1 - 7° - - 7° -
θ2 - 3° - - 3° -
θ3 -
- 12° -
- 12°
θ4 -
- 3°
-
- 3°
DEP 0.10 0.18 0.25 0.004 0.007 0.010
11 www.hooyi.cc
11 Page |
Páginas | Total 16 Páginas | |
PDF Descargar | [ Datasheet HY1707PS.PDF ] |
Número de pieza | Descripción | Fabricantes |
HY1707P | N-Channel Enhancement Mode MOSFET | HOOYI |
HY1707PM | N-Channel Enhancement Mode MOSFET | HOOYI |
HY1707PS | N-Channel Enhancement Mode MOSFET | HOOYI |
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