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What is MMDF2P02HD?

This electronic component, produced by the manufacturer "ON Semiconductor", performs the same function as "Power MOSFET ( Transistor )".


MMDF2P02HD Datasheet PDF - ON Semiconductor

Part Number MMDF2P02HD
Description Power MOSFET ( Transistor )
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 


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MMDF2P02HD
Power MOSFET
2 Amps, 20 Volts
PChannel SO8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
draintosource diode has a very low reverse recovery time. These
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dcdc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Logic Level Gate Drive Can Be Driven by Logic ICs
Miniature SO8 Surface Mount Package Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for SO8 Package Provided
This is a PbFree Device
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1)
Rating
Symbol Value Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MW)
GatetoSource Voltage Continuous
Drain
Drain
Drain
Current
Current
Current
CCSioonnngttliiennuuPoouuulssse@@(tpTTAA
= 25°C
= 100°C
10 ms)
Total Power Dissipation, TA = 25°C (Note 2)
Operating and Storage Temperature Range
Single Pulse DraintoSource Avalanche
EVL nG=eS1rg=8y5m.0HS,VtRadrcGt,in=IgL2=T5JW6=.)025A°pCk,(VDD = 20 Vdc,
VDSS
VDGR
VGS
IDIIDDM
PD
TJ, Tstg
EAS
20
20
± 20
3.3
2.1
20
2.0
55 to 150
324
Vdc
Vdc
Vdc
Adc
Apk
W
°C
mJ
Thermal Resistance, JunctiontoAmbient
(Note 2)
RqJA
62.5 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for PChannel device omitted for clarity.
2. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided) with
one die operating, 10 sec. max.
http://onsemi.com
2 AMPERES, 20 VOLTS
RDS(on) = 160 mW
PChannel
D
G
8
1
S
SO8, DUAL
CASE 751
STYLE 11
MARKING
DIAGRAM
8
D2P02
AYWWG
G
1
D2P02 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source1
Gate1
Source2
Gate2
1 8 Drain1
2 7 Drain1
3 6 Drain2
4 5 Drain2
ORDERING INFORMATION
Device
Package
Shipping
MMDF2P02HDR2G SO8 2500 Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
October, 2011 Rev. 8
1
Publication Order Number:
MMDF2P02HD/D

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MMDF2P02HD equivalent
MMDF2P02HD
12
QT
18
10 15
VGS
8 12
69
4 Q1
2
Q2
ID = 2 A
TJ = 25°C
6
3
Q3
0
04
VDS
8 12
0
16
QT, TOTAL GATE CHARGE (nC)
Figure 8. GateToSource and DrainToSource
Voltage versus Total Charge
1000
VDD = 10 V
ID = 2 A
VGS = 10 V
TJ = 25°C
100
10
1
td(off)
tf
tr
td(on)
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
DRAINTOSOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 15. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
2.0
VGS = 0 V
TJ = 25°C
1.6
1.2
0.8
0.4
0
0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
http://onsemi.com
5


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