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PDF NTHC5513 Data sheet ( Hoja de datos )
| Número de pieza | NTHC5513 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTHC5513
Power MOSFET
20 V, +3.9 A / −3.0 A,
Complementary ChipFETt
Features
• Complementary N−Channel and P−Channel MOSFET
• Small Size, 40% Smaller than TSOP−6 Package
• Leadless SMD Package Featuring Complementary Pair
• ChipFET Package Provides Great Thermal Characteristics Similar to
Larger Packages
• Low RDS(on) in a ChipFET Package for High Efficiency Performance
• Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
Environments Such as Portable Electronics
• Pb−Free Package is Available
Applications
• Load Switch Applications Requiring Level Shift
• DC−DC Conversion Circuits
• Drive Small Brushless DC Motors
• Designed for Power Management Applications in Portable, Battery
Powered Products
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
N−Ch TA = 25°C
Steady
State TA = 85°C
tv5
P−Ch
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Pulsed Drain Current
(Note 1)
tv5
N−Ch
P−Ch
TA = 25°C
t = 10 ms
t = 10 ms
VDSS
VGS
ID
ID
IDM
20
±12
2.9
2.1
3.9
−2.2
−1.6
−3.0
12
−9.0
V
V
A
A
A
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
1.1 W
tv5
Operating Junction and Storage
Temperature
TA = 25°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
TJ,
TSTG
TL
2.1
−55 to
150
260
°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
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V(BR)DSS
N−Channel
20 V
P−Channel
−20 V
RDS(on) TYP
60 mW @ 4.5 V
80 mW @ 2.5 V
130 mW @ −4.5 V
200 mW @ −2.5 V
ID MAX
3.9 A
−3.0 A
D1 S2
G1 G2
S1
N−Channel MOSFET
D2
P−Channel MOSFET
ChipFET
CASE 1206A
STYLE 2
PIN
CONNECTIONS
MARKING
DIAGRAM
D1 8
D1 7
D2 6
D2 5
1 S1
2 G1
3 S2
4 G2
1
2
3
4
8
7
6
5
C1 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
Package
Shipping†
NTHC5513T1 ChipFET 3000/Tape & Reel
NTHC5513T1G ChipFET 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 4
1
Publication Order Number:
NTHC5513/D
1 page  
NTHC5513
TYPICAL N−CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
400 CISS VDS = 0 V
VGS = 0 V
TJ = 25°C
5
4.5
QG
20
4 16
300 3.5
CRSS
3
12
200 2.5
2 QGS
1.5
QGD
8
100
COSS
1
ID = 2.7 A 4
0.5 TJ = 25°C
0
10 5
05
VGS VDS
0
10 15 20 0
0.5 1
1.5 2
2.5
QG, TOTAL GATE CHARGE (nC)
0
3
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
VDD = 16 V
ID = 2.7 A
VGS = 4.5 V
10
tr
td(OFF
td(O)N)
tf
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
7
VGS = 0 V
6 TJ = 25°C
5
4
3
2
1
0
0.3 0.45 0.6 0.75 0.9 1.05 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
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