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PDF AOL1700 Data sheet ( Hoja de datos )
| Número de pieza | AOL1700 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOL1700
N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
SRFET TM AOL1700 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON),and low gate
charge. This device is suitable for use as a low side
FET in SMPS, load switching and general purpose
applications.
-RoHS Compliant
-Halogen and Antimony Free Green Device*
VDS (V) = 30V
ID =85A (VGS = 10V)
RDS(ON) < 4.2mΩ (VGS = 10V)
RDS(ON) < 6.0mΩ (VGS = 4.5V)
UIS Tested!
Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View
S
G
D
Bottom tab
connected to
drain
D
SRFET TM
Soft Recovery MOSFET:
Integrated Schottky Diode
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C H
Current B
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
Current A
Avalanche Current C
TA=25°C
TA=70°C
Repetitive avalanche energy L=0.3mH C
IDSM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
85
81
200
17
13
30
135
100
50
2.1
1.3
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
19.6
50
1
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AOL1700
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
100 TC=25°C
80
TC=150°C
60
40
20
0
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
110
100
90
80
70
60
50
40
30
20
10
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 13: Power De-rating (Note B)
175
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
100
TJ(Max)=150°C
80 TA=25°C
60
40
20
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure15: Single Pulse Power Rating Junction-to-
Ambient (Note G)
0.1
0.01
0.001
0.00001
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
PD
Ton
T
0.0001
0.001
0.01
0.1
1
10 100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note G)
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOL1700.PDF ] | |
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