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PDF AO4718 Data sheet ( Hoja de datos )
| Número de pieza | AO4718 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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General Description
SRFET TM The AO4718 uses advanced trench
technology with a monolithically integrated
Schottky diode to provide excellent RDS(ON),and
low gate charge. This device is suitable for use
as a low side FET in SMPS, load switching and
general purpose applications.
AO4718
30V N-Channel MOSFET
SRFET TM
Features
VDS (V) = 30V
ID =15A (VGS = 10V)
RDS(ON) < 9mΩ (VGS = 10V)
RDS(ON) < 14mΩ (VGS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
D
D
D
D
SOIC-8
Bottom View
D
G
S
S
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TA=25°C
Current AF
TA=70°C
Pulsed Drain Current B
Avalanche Current B
Avalanche energy L=0.3mH B
VGS
IDSM
IDM
IAS, IAR
EAS, EAR
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±20
15
12
80
25
94
3.1
2.0
-55 to 150
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Units
V
A
mJ
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
t ≤ 10s
Steady-State
RθJA
Steady-State
RθJL
Typ
32
60
17
Max
40
75
24
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
1 page  
AO4718
+
VDC
-
Vgs
Ig
Gate Charge Test Circuit & Waveform
+
Vds
VDC
DUT -
Vgs
10V
Qgs
Qg
Qgd
Vds
Vgs
Rg
Resistive Switching Test Circuit & Waveforms
RL
Vds
DUT
+
Vdd
VDC
-
Charge
90%
10%
Vgs
Vgs
td(on) tr
ton
td(off)
tf
toff
Vds
Id
Vgs
Rg
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
Vgs
+
VDC Vdd
- Id
DUT
Vgs
B VDSS
I AR
Vds +
Vds -
Isd
Vgs
Ig
DUT
L
Diode Recovery Test Circuit & Waveforms
Vgs
Q rr = - Idt
+
Vdd
VDC
-
Isd
Vds
I F t rr
dI/dt
I RM
Vdd
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AO4718.PDF ] | |
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