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PDF NP100N04PUK Data sheet ( Hoja de datos )
| Número de pieza | NP100N04PUK | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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NP100N04PUK
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0545EJ0100
Rev.1.00
Sep 23, 2011
Description
The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A )
• Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V )
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP100N04PUK-E1-AY ∗1
NP100N04PUK-E2-AY ∗1
Lead Plating
Pure Sn (Tin)
Packing
Tape 800 p/reel
Taping (E1 type)
Taping (E2 type)
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-263 (MP-25ZP)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±100
±400
176
1.8
175
−55 to +175
43
185
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.85
83.3
°C/W
°C/W
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. RG = 25 Ω, VGS = 20 Æ 0 V
R07DS0545EJ0100 Rev.1.00
Sep 23, 2011
Page 1 of 6
1 page  
NP100N04PUK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
4
3
2
VGS = 10 V
1 ID = 50 A
Pulsed
0
-100 -50 0 50 100 150 200
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
1000
100
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
td(of f )
td( on)
tr
tf
1
0.1
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
0V
10
1
0.1
0
0.2 0.4 0.6 0.8
Pulsed
1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Cr ss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
35
30
VDD = 32 V
20 V
25 8 V
14
12
10
20 8
VGS
15 6
10 4
5 VDS
2
ID = 100 A
00
0 10 20 30 40 50 60 70 80 90
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/µs
VGS = 0 V
1 10 100
IF - Drain Current - A
R07DS0545EJ0100 Rev.1.00
Sep 23, 2011
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP100N04PUK.PDF ] | |
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