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PDF RJK4015DPK Data sheet ( Hoja de datos )
| Número de pieza | RJK4015DPK | |
| Descripción | High Speed Power Switching MOS FET | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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RJK4015DPK
400V - 30A - MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS(on) = 0.14 typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
Preliminary Datasheet
R07DS0446EJ0200
(Previous: REJ03G1590-0100)
Rev.2.00
Jun 21, 2012
1
2
3
D
G
S
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1 %
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
ch-c
Tch
Tstg
Ratings
400
30
30
90
30
90
10
5.71
150
0.833
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0446EJ0200 Rev.2.00
Jun 21, 2012
Page 1 of 6
1 page  
RJK4015DPK
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1 0.1
0.05
0.03 0.02
0.01
0.01
10 μ
100 μ
θch – c (t) = γ s (t) • θch – c
θch – c = 0.833°C/W, Tc = 25°C
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Preliminary
Switching Time Test Circuit
Vin Monitor
10 Ω
Vin
10 V
D.U.T.
Vout
Monitor
RL
VDD
= 200 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
R07DS0446EJ0200 Rev.2.00
Jun 21, 2012
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RJK4015DPK.PDF ] | |
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