STP12NM50FP Datasheet PDF - STMicroelectronics
Part Number | STP12NM50FP | |
Description | N-CHANNEL MOSFET | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and STP12NM50FP download ( pdf file ) link at the bottom of this page. Total 17 Pages |
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STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK
MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
STB12NM50
STB12NM50-1
STP12NM50
STP12NM50FP
550V
550V
550V
550V
RDS(on)
<0.35Ω
<0.35Ω
<0.35Ω
<0.35Ω
ID
12A
12A
12A
12A
■ High dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ 100% avalanche tested
■ Low gate input resistance
■ Tight process control and high manufacturing
yields
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
Internal schematic diagram
Order codes
Part number
STB12NM50T4
STB12NM50-1
STP12NM50
STP12NM50FP
Marking
B12NM50
B12NM50
P12NM50
P12NM50FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
July 2006
Rev 11
1/17
www.st.com
17
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STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A, VGS=0
ISD=12A,
di/dt = 100A/µs,
VDD=100V, Tj=25°C
(see Figure 16)
ISD=12A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
11 A
48 A
1.5 V
270 ns
2.23 µC
16.5 A
340 ns
3 µC
18 A
5/17
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STP12NM50FP electronic component. |
Information | Total 17 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ STP12NM50FP.PDF Datasheet ] |
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