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What is STP12NM50FP?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-CHANNEL MOSFET".


STP12NM50FP Datasheet PDF - STMicroelectronics

Part Number STP12NM50FP
Description N-CHANNEL MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STP12NM50 - STP12NM50FP
STB12NM50 - STB12NM50-1
N-channel 550V @ tjmax - 0.30- 12A TO-220/FP/D2/I2PAK
MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
STB12NM50
STB12NM50-1
STP12NM50
STP12NM50FP
550V
550V
550V
550V
RDS(on)
<0.35
<0.35
<0.35
<0.35
ID
12A
12A
12A
12A
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
100% avalanche tested
Low gate input resistance
Tight process control and high manufacturing
yields
Description
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain
process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competition’s products.
Applications
Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D²PAK
123
I²PAK
Internal schematic diagram
Order codes
Part number
STB12NM50T4
STB12NM50-1
STP12NM50
STP12NM50FP
Marking
B12NM50
B12NM50
P12NM50
P12NM50FP
Package
D²PAK
I²PAK
TO-220
TO-220FP
Packaging
Tape & reel
Tube
Tube
Tube
July 2006
Rev 11
1/17
www.st.com
17

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STP12NM50FP equivalent
STP12NM50-STP12NM50FP-STB12NM50-STB12NM50-1
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12A, VGS=0
ISD=12A,
di/dt = 100A/µs,
VDD=100V, Tj=25°C
(see Figure 16)
ISD=12A,
di/dt = 100A/µs,
VDD=100V, Tj=150°C
(see Figure 16)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
11 A
48 A
1.5 V
270 ns
2.23 µC
16.5 A
340 ns
3 µC
18 A
5/17


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STP12NM50FP electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
STP12NM50FPThe function is N-CHANNEL MOSFET. STMicroelectronicsSTMicroelectronics

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