|
|
PDF Si4952DY Data sheet ( Hoja de datos )
| Número de pieza | Si4952DY | |
| Descripción | Dual N-Channel 25-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de Si4952DY (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
Dual N-Channel 25-V (D-S) MOSFET
Si4952DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.023 at VGS = 10 V
25
0.028 at VGS = 4.5 V
ID (A)a
8
8
Qg (Typ.)
5.5 nC
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
• Gaming
• Notebook System Power
D1 D2
G1 G2
Ordering Information: Si4952DY-T1-E3 (Lead (Pb)-free)
Si4952DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
25
± 16
8a
7
7b, c
5.6b, c
30
2.3
1.5b, c
5
1.25
2.8
1.8
1.8b, c
1.1b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 110 °C/W.
Symbol
RthJA
RthJF
Typical
57
36
Maximum
70
44
Unit
°C/W
Document Number: 70448
S09-0764-Rev. C, 04-May-09
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 3.0
8
Package Limited
6
4
2
2.5
2.0
1.5
1.0
0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
25
Si4952DY
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 70448
S09-0764-Rev. C, 04-May-09
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet Si4952DY.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| Si4952DY | Dual N-Channel 25-V (D-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |