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PDF AOTF4185 Data sheet ( Hoja de datos )
| Número de pieza | AOTF4185 | |
| Descripción | 40V P-Channel MOSFET | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOTF4185
40V P-Channel MOSFET
General Description
Product Summary
The AOTF4185 combines advanced trench MOSFET -
40V technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
VDS
ID (at VGS=-10V)
RDS(ON) (at VGS=-10V)
RDS(ON) (at VGS =-4.5V)
100% UIS Tested
100% Rg Tested
-40V
-34A
< 16mΩ
< 20mΩ
Top View
TO220F
Bottom View
D
G DS
S DG
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
S
Maximum
-40
±20
-34
-27
-100
-42
88
33
16
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient AD
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Symbol
RθJA
RθJC
Typ
10
3
Max
13
4.5
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
Rev.2.0: May 2013
www.aosmd.com
Page 1 of 6
1 page  
AOTF4185
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50 50
40 40
30 30
20 20
10 10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 12: Power De-rating (Note B)
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Current De-rating (Note B)
1000
TA=25°C
100
10
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 14: Single Pulse Avalanche capability
Rev.2.0: May 2013
www.aosmd.com
Page 5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet AOTF4185.PDF ] | |
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