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What is ZXMS6006DT8Q?

This electronic component, produced by the manufacturer "Diodes", performs the same function as "60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET".


ZXMS6006DT8Q Datasheet PDF - Diodes

Part Number ZXMS6006DT8Q
Description 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Manufacturers Diodes 
Logo Diodes Logo 


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  Green
ZXMS6006DT8Q
60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
Features and Benefits
Continuos Drain Source Voltage 60V
On-State Resistance
100m
Nominal Load Current (VIN = 5V) 2.8A
Clamping Energy
210mJ
Description
The ZXMS6006DT8Q is a dual self protected low side MOSFET with
logic level input. It integrates over-temperature, over-current, over-
voltage (active clamp) and ESD protected logic level functionality. The
ZXMS6006DT8Q is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Lamp Driver
Motor Driver
Relay Driver
Solenoid Driver
SM-8
Compact High Power Dissipation Package
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Over Voltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable
Mechanical Data
Case: SM-8
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.117 grams (approximate)
D1
D2
1
IN1
D1
S1 D1
IN1 IN2
IN2 D2
Top View
S1
Device Symbol
S2
S2
Top View
Pin-Out
D2
Ordering Information (Note 4)
Product
ZXMS6006DT8QTA
Marking
ZXMS6006D
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
ZXMS
6006D
Pin 1
ZXMS6006D = Product Type Marking Code
Top View
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6006DT8Q
Document number: DS37137 Rev. 3 - 2
1 of 8
www.diodes.com
June 2014
© Diodes Incorporated

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ZXMS6006DT8Q equivalent
  Green
ZXMS6006DT8Q
Typical Characteristics
16
V
14
IN
5V
12 4.5V
10
4V
3.5V
8 3V3V
6 2.5V
4
2V
2 TA = 25°C
0
0 1 2 3 4 5 6 7 8 9 10 11 12
VDS Drain-Source Voltage (V)
Typical Output Characteristic
0.20
0.15
0.10
ID = 1A
TJ = 150°C
0.05
TJ = 25°C
0.00
2.0 2.5 3.0 3.5 4.0 4.5
VIN Input Voltage (V)
On-Resistance vs Input Voltage
5.0
0.20
0.15
0.10
0.05
V = 3V
IN
VIN = 5V
120
100
80
60
40
20
0
01234
VIN Input Voltage (V)
Input Current vs Input Voltage
5
1.4
1.3 VIN = VDS
I = 1mA
1.2 D
1.1
1.0
0.9
0.8
0.7
-50 -25 0 25 50 75 100 125 150
TJ Junction Temperature (°C)
Threshold Voltage vs Temperature
10
TJ=150°C
1
TJ=25°C
0.1
0.00-50 -25 0 25 50 75 100 125 150
TJ Junction Temperature (°C)
On-Resistance vs Temperature
0.01
0.4 0.6 0.8
VSD Source-Drain Voltage (V)
Reverse Diode Characteristic
1.0
IntelliFET is a registered trademark of Diodes Incorporated.
ZXMS6006DT8Q
Document number: DS37137 Rev. 3 - 2
5 of 8
www.diodes.com
June 2014
© Diodes Incorporated


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Featured Datasheets

Part NumberDescriptionMFRS
ZXMS6006DT8QThe function is 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET. DiodesDiodes
ZXMS6006DT8QTAThe function is 60V DUAL N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET. DiodesDiodes

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