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What is ZXMS6004SG?

This electronic component, produced by the manufacturer "Diodes", performs the same function as "60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET".


ZXMS6004SG Datasheet PDF - Diodes

Part Number ZXMS6004SG
Description 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET
Manufacturers Diodes 
Logo Diodes Logo 


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ZXMS6004SG
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET ® MOSFET
Product Summary
Continuos Drain Source Voltage
On-State Resistance
Nominal Load Current (VIN = 5V)
Clamping Energy
60V
500m
1.3A
480mJ
Description
The ZXMS6004SG is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6004SG is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Applications
Especially suited for loads with a high in-rush current such as
lamps and motors.
All types of resistive, inductive and capacitive loads in switching
applications.
µC compatible power switch for 12V and 24V DC applications
Automotive rated.
Replaces electromechanical relays and discrete circuits.
Linear Mode capability - the current-limiting protection circuitry is
designed to de-activate at low VDS to minimize on state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the product’s ability to self-protect at low VDS.
Features and Benefits
Compact High Power Dissipation Package
Low Input Current
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Over Voltage Protection (active clamp)
Thermal Shutdown with Auto Restart
Over-Current Protection
Input Protection (ESD)
High Continuous Current Rating
Lead-Free Finish; RoHS compliant (Note 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (approximate)
Top View
SOT223
Ordering Information (Note 4)
Product
ZXMS6004SGTA
Marking
ZXMS6004S
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1,000
Note:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
ZXMS
6004S
ZXMS6004S = Product type Marking Code
IntelliFET® is a registered trademark of Diodes Incorporated.
ZXMS6004SG
Document number: DS33610 Rev. 3 - 2
1 of 9
www.diodes.com
June 2014
© Diodes Incorporated

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ZXMS6004SG equivalent
ZXMS6004SG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Static Characteristics
Drain-Source Clamp Voltage
Off State Drain Current
Input Threshold Voltage
Input Current
Input Current While Over Temperature Active
Static Drain-Source On-State Resistance
Continuous Drain Current (Note 4)
Continuous Drain Current (Note 5)
Current Limit
Current Limit (Note 7)
Dynamic Characteristics
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 8)
Thermal Hysteresis (Note 8)
Symbol
VDS(AZ)
IDSS
VIN(th)
IIN
RDS(on)
ID
ID(LIM)
td(on)
tr
td(off)
ff
TJT
ff
Min
60
0.7
0.9
1.0
1.2
1.3
0.7
1
150
Typ
65
1
60
120
400
350
1.7
2.2
5
10
45
15
175
10
Max
70
500
1
1.5
100
200
400
600
500
Unit Test Condition
V ID = 10mA
nA VDS = 12V, VIN = 0V
µA VDS = 36V, VIN = 0V
V VDS = VGS, ID = 1mA
μA
VIN = +3V
VIN = +5V
μA VIN = +5V
mΩ
VIN = +3V, ID = 0.5A
VIN = +5V, ID = 0.5A
VIN = 3V; TA = +25°C
A VIN = 5V; TA = +25°C
VIN = 3V; TA = +25°C
VIN = 5V; TA = +25°C
A VIN = +3V
VIN = +5V
μs VDD = 12V, ID = 0.5A, VGS = 5V
°C —
°C —
Notes:
7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods.
IntelliFET® is a registered trademark of Diodes Incorporated.
ZXMS6004SG
Document number: DS33610 Rev. 3 - 2
5 of 9
www.diodes.com
June 2014
© Diodes Incorporated


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ZXMS6004SGThe function is 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET. DiodesDiodes
ZXMS6004SGQThe function is 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET. DiodesDiodes
ZXMS6004SGQTAThe function is 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE MOSFET. DiodesDiodes

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