|
|
PDF PN2222 Data sheet ( Hoja de datos )
| Número de pieza | PN2222 | |
| Descripción | NPN Silicon General Purpose Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de PN2222 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
PN2222, PN2222A
General Purpose
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Collector-Emitter Voltage
PN2222
PN2222A
VCEO
Collector-Base Voltage
PN2222
PN2222A
VCBO
Emitter-Base Voltage
PN2222
PN2222A
VEBO
Collector Current − Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
IC
PD
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
Value
30
40
60
75
5.0
6.0
600
625
5.0
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
W
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction-to-Ambient
RqJA
200 °C/W
Thermal Resistance,
Junction-to-Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO−92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
PN
2222
YWW G
G
PN2
222A
YWW G
G
PN2222
PN2222A
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 5
1
Publication Order Number:
PN2222/D
1 page  
PN2222, PN2222A
10 10
RS = OPTIMUM
f = 1.0 kHz
8.0
IC = 1.0 mA, RS = 150 W
500 mA, RS = 200 W
RS = SOURCE
RS = RESISTANCE
8.0
IC = 50 mA
100 mA, RS = 2.0 kW
100 mA
6.0 50 mA, RS = 4.0 kW
6.0 500 mA
1.0 mA
4.0 4.0
2.0 2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
f, FREQUENCY (kHz)
Figure 7. Frequency Effects
50 100
0
50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
RS, SOURCE RESISTANCE (OHMS)
Figure 8. Source Resistance Effects
30
20
Ceb
10
7.0
5.0
Ccb
3.0
2.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
20 30 50
500
VCE = 20 V
TJ = 25°C
300
200
100
70
50
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 10. Current−Gain Bandwidth Product
1.0
TJ = 25°C
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
1.0 V
0.2
VCE(sat) @ IC/IB = 10
0
0.1 0.2 0.5 1.0 2.0
5.0 10 20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltages
500 1.0 k
+0.5
0 RqVC for VCE(sat)
- 0.5
- 1.0
- 1.5
- 2.0 RqVB for VBE
- 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 12. Temperature Coefficients
500
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet PN2222.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| PN2221 | (PN2221 / PN2222) NPN SILICON TRANSISTOR |  Central Semiconductor |
| PN2221A | (PN2221 / PN2222) NPN SILICON TRANSISTOR | Central Semiconductor |
| PN2222 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |  Micro Electronics |
| PN2222 | General Purpose Transistor |  Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |