|
|
Datasheet ZXTR2112F Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | ZXTR2112F | 12V 15mA REGULATOR TRANSISTOR A Product Line of Diodes Incorporated
ZXTR2112F
60V INPUT, 12V 15mA REGULATOR TRANSISTOR
Description
The ZXTR2112F monolithically integrates a transistor, zener diode and resistor to function as a linear regulator. The device regulates with a 12V nominal output at 15mA. It is designed for use in hi | Diodes | transistor |
2 | ZXTR2112FQ | 12V 15mA REGULATOR TRANSISTOR ZXTR2112FQ
60V INPUT, 12V 15mA REGULATOR TRANSISTOR
Description
The ZXTR2112FQ monolithically integrates a transistor, zener diode and resistor to function as a linear regulator. The device regulates with a 12V nominal output at 15mA. It is designed for use in high voltage applications where standa | Diodes | transistor |
ZXT Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | ZXT1053AK | 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ZXT1053AK
75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK
SUMMARY BVCEO = 75V : RSAT = 70m DESCRIPTION
Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management f Zetex Semiconductors transistor | | |
2 | ZXT1053AKTC | 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK ZXT1053AK
75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK
SUMMARY BVCEO = 75V : RSAT = 70m DESCRIPTION
Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management f Zetex Semiconductors transistor | | |
3 | ZXT10N15DE6 | 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10N15DE6
SuperSOT™ 15V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=15V; RSAT = 50m ; IC= 4A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. Zetex Semiconductors transistor | | |
4 | ZXT10N20DE6 | 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10N20DE6
SuperSOT™ 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses Zetex Semiconductors transistor | | |
5 | ZXT10N50DE6 | 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10N50DE6
SuperSOT™ 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. Zetex Semiconductors transistor | | |
6 | ZXT10P12DE6 | 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10P12DE6
SuperSOT™ 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses Zetex Semiconductors transistor | | |
7 | ZXT10P20DE6 | 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10P20DE6
SuperSOT™ 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state loss Zetex Semiconductors transistor | | |
8 | ZXT10P40DE6 | 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR ZXT10P40DE6
SuperSOT™ 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=-40V; RSAT = 105m ; IC= -2A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losse Zetex Semiconductors transistor | | |
9 | ZXT11N15DF | 15V NPN SILICON LOW SATURATION TRANSISTOR ZXT11N15DF
SuperSOT4™ 15V NPN SILICON LOW SATURATION TRANSISTOR
SUMMARY VCEO=15V; RSAT = 37m ; IC= 3A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This make Zetex Semiconductors transistor | |
Esta página es del resultado de búsqueda del ZXTR2112F. Si pulsa el resultado de búsqueda de ZXTR2112F se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |