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PDF LBC857CLT1G Data sheet ( Hoja de datos )
| Número de pieza | LBC857CLT1G | |
| Descripción | General Purpose Transistors | |
| Fabricantes | Leshan Radio Company | |
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
• We declare that the material of product compliance with
RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC857CLT1G
S-LBC857CLT1G
Series
3
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value
Collector-Emitter Voltage
LBC856
LBC857
LBC858, LBC859
VCEO
–65
–45
–30
Collector-Base Voltage
LBC856
LBC857
LBC858, LBC859
VCBO
–80
–50
–30
Emitter–Base Voltage
Collector Current – Continuous
THERMAL CHARACTERISTICS
VEBO
IC
–5.0
–100
Characteristic
Symbol Max
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C
Derate above 25°C
PD
225
1.8
Thermal Resistance,
Junction to Ambient
RqJA
556
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C
Derate above 25°C
PD
300
2.4
Thermal Resistance,
Junction to Ambient
RqJA
417
Junction and Storage Temperature
TJ, Tstg
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
–55 to
+150
Unit
V
V
V
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
2
SOT–23
1
B ASE
3
COLLECT OR
2
EMIT T ER
MARKING DIAGRAM
3
xx
12
xx= Device Marking
(See Table Below)
Rev.O 1/7
1 page  
LBC856
LESHAN RADIO COMPANY, LTD.
LBC857CLT1G Series
S-LBC857CLT1G Series
V CE = –5.0V
T A = 25°C
2.0
1.0
0.5
0.2
–0.1–0.2 –1.0–2.0 –5.0–10–20 –50–100–200
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
–2.0
–1.6
–1.2
IC =
–10 mA
–20mA
–50mA –100mA –200mA
–0.8
–0.4
TJ= 25°C
0
–0.02 –0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
I B , BASE CURRENT (mA)
Figure 9. Collector Saturation Region
–1.0
–0.8
–0.6
–0.4
T J= 25°C
VBE(sat) @ I C/I B= 10
VBE @VCE= –5.0 V
–0.2
0
–0.2
VCE(sat) @ I C /I B= 10
–0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100 –200
I C , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
–1.0
–1.4
–1.8
–2.2
θ VB for V BE
–55°C to 125°C
–2.6
–3.0
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
I C , COLLECTOR CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
40
T J= 25°C
20 C ib
10
8.0
6.0
C ob
4.0
2.0
–0.1–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100
V R , REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
500 VCE= –5.0 V
200
100
50
20
–1.0 –10 –100
I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain – Bandwidth Product
Rev.O 5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet LBC857CLT1G.PDF ] | |
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