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What is UPA2821T1L?

This electronic component, produced by the manufacturer "Renesas", performs the same function as "MOS FIELD EFFECT TRANSISTOR".


UPA2821T1L Datasheet PDF - Renesas

Part Number UPA2821T1L
Description MOS FIELD EFFECT TRANSISTOR
Manufacturers Renesas 
Logo Renesas Logo 


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μPA2821T1L
MOS FIELD EFFECT TRANSISTOR
PreliminaryData Sheet
R07DS0753EJ0100
Rev.1.00
May 25, 2012
Description
The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a
notebook computer and Lithium-Ion battery protection circuit.
Features
VDSS = 30 V (TA = 25°C)
Low on-state resistance
RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A)
4.5 V Gate-drive available
Small surface mount package (8-pin HVSON (3333))
Pb-free, Halogen Free
Ordering Information
Part No.
Lead Plating
Packing
Package
μPA2821T1L-E1-AT 1
Pure Sn (Tin)
Tape 3000 p/reel 8-pin HVSON (3333)
μPA2821T1L-E2-AT 1
typ. 0.028 g
Note: 1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 3
Signal Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
±20
±26
±104
1.5
3.8
52
150
55 to +150
18
32.4
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
R07DS0753EJ0100 Rev.1.00
May 25, 2012
Page 1 of 6

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UPA2821T1L equivalent
μPA2821T1L
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
VDS
20
VDD = 24 V
15 V
6V
12
10
8
VGS
6
10 4
ID = 26 A
2
00
0 20 40 60
QG - Gate Charge - nC
Chapter Title
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
100
4.5 V
10
0V
Pulsed
1
0 0.4 0.8 1.2
VF(S-D) - Source to Drain Voltage - V
R07DS0753EJ0100 Rev.1.00
May 25, 2012
Page 5 of 6


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for UPA2821T1L electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
UPA2821T1LThe function is MOS FIELD EFFECT TRANSISTOR. RenesasRenesas

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