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PDF 74LVC1G10 Data sheet ( Hoja de datos )

Número de pieza 74LVC1G10
Descripción SINGLE 3 INPUT POSITIVE NAND GATE
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74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Description
The 74LVC1G10 is a single 3-input positive NAND gate with
a standard push-pull output. The device is designed for
operation with a power supply range of 1.65V to 5.5V. The
inputs are tolerant to 5.5V allowing this device to be used in
a mixed voltage environment. The device is fully specified
for partial power down applications using IOFF. The IOFF
circuitry disables the output preventing damaging current
backflow when the device is powered down.
The gate performs the positive Boolean function:
Y = A B C or Y = A + B + C
Features
Pin Assignments
(Top View)
(Top View)
A1
6 C A1
6C
GND 2
B3
5 VCC GND 2
4 Y B3
5 VCC
4Y
SOT26
SOT363
(Top View)
A1 6C
GND 2 5 VCC
B3 4Y
DFN1410
(Top View)
A1
6C
GND 2
B3
5 VCC
4Y
DFN1010
Applications
• Wide Supply Voltage Range from 1.65V to 5.5V
• ± 24mA Output Drive at 3.3V
• CMOS low power consumption
• IOFF Supports Partial-Power-Down Mode Operation
• Inputs accept up to 5.5V
• ESD Protection Exceeds JESD 22
200-V Machine Model (A115-A)
2000-V Human Body Model (A114-A)
• Latch-Up Exceeds 100mA per JESD 78, Class II
• Range of Package Options
• SOT26, SOT363, DFN1410, and DFN1010: Available in
“Green” Molding Compound (no Br, Sb)
• Lead Free Finish/ RoHS Compliant (Note 1)
• Voltage Level Shifting
• General Purpose Logic
• Power Down Signal Isolation
• Wide array of products such as:
o PCs, networking, notebooks, netbooks, PDAs
o Computer peripherals, hard drives, CD/DVD ROM
o TV, DVD, DVR, set top box
o Cell Phones, Personal Navigation / GPS
o MP3 players ,Cameras, Video Recorders
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
74LVC1G10
Document number: DS35121 Rev. 3 - 2
1 of 13
www.diodes.com
October 2011
© Diodes Incorporated

1 page




74LVC1G10 pdf
74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Electrical Characteristics TA = -40°C to 125°C (All typical values are at VCC = 3.3V, TA = 25°C)
Symbol
VOH
VOL
II
IOFF
ICC
ΔICC
Ci
θJA
θJC
Parameter
High Level Output
Voltage
High-level Input Voltage
Input Current
Power Down Leakage
Current
Supply Current
Additional Supply
Current
Input Capacitance
Thermal Resistance
Junction-to-Ambient
Thermal Resistance
Junction-to-Case
Test Conditions
IOH = -100μA
IOH = -4mA
IOH = -8mA
IOH = -16mA
IOH = -24mA
IOH = -32mA
IOL = 100μA
IOL = 4mA
IOL = 8mA
IOL = 16mA
IOL = 24mA
IOL = 32mA
VI = 5.5 V or GND
VI or VO = 5.5V
VI = 5.5V of GND
IO=0
Input at VCC –0.6V
Vi = VCC – or GND
SOT26
SOT363
DFN1410
DFN1010
SOT26
SOT363
DFN1410
DFN1010
VCC
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
1.65V to 5.5V
1.65V
2.3V
3V
4.5V
0 to 5.5V
0
Min
VCC – 0.1
0.95
1.7
1.9
2.0
3.4
Typ.
1.65V to 5.5V
3V to 5.5V
3.3
(Note 4)
(Note 4)
4
204
371
430
510
52
143
190
250
Max Unit
V
0.1
0.70
0.45
0.60
0.80
0.80
± 20
± 20
40
5000
V
μA
μA
μA
μA
pF
oC/W
oC/W
Package Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)
Symbol
Parameter
CI Input Capacitance
θJA
Thermal Resistance
Junction-to-Ambient
Test Conditions
VI = VCC – or GND
SOT26
SOT363
DFN1410
DFN1010
VCC
3.3
(Note 4)
Min Typ. Max Unit
3.5 pF
204
371
430
oC/W
510
θJC
Thermal Resistance
Junction-to-Case
SOT26
SOT363
DFN1410
DFN1010
(Note 4)
52
143
190
oC/W
250
Notes: 4. Test condition for SOT26, SOT363, DFN1410 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
74LVC1G10
Document number: DS35121 Rev. 3 - 2
5 of 13
www.diodes.com
October 2011
© Diodes Incorporated

5 Page





74LVC1G10 arduino
74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
Package Outline Dimensions (All Dimensions in mm)
(1) Package Type: SOT26
(2) Package Type: SOT363
CL
0.10/0.30
CL
4x-0.65
CL
CL 6x-0.42
PIN 1
0.40/0.45
0.65Bsc.
Land Pattern Recommendation
(unit:mm)
CL
1.8/2.2
"A"
Detail"A"
Gauge Plane
0.25/0.40
74LVC1G10
Document number: DS35121 Rev. 3 - 2
11 of 13
www.diodes.com
October 2011
© Diodes Incorporated

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