10N65 Datasheet PDF - LONG-SEMI
Part Number | 10N65 | |
Description | N-CHANNEL MOSFET | |
Manufacturers | LONG-SEMI | |
Logo | ||
There is a preview and 10N65 download ( pdf file ) link at the bottom of this page. Total 10 Pages |
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N 沟道增强型场效应晶体管
N-CHANNEL MOSFET
主要参数 MAIN CHARACTERISTICS
封装 Package
ID 9.5 A
VDSS 650 V
Rdson(@Vgs=10V) 0.95Ω
Qg 34 nC
用途
z 高频开关电源
z 电子镇流器
z UPS 电源
APPLICATIONS
z High efficiency switch
mode power supplies
z Electronic lamp ballasts
based on half bridge
z UPS
产品特性
z低栅极电荷
z低 Crss (典型值 20pF)
z开关速度快
z产品全部经过雪崩测试
z高抗 dv/dt 能力
zRoHS 产品
FEATURES
zLow gate charge
zLow Crss (typical 20pF )
zFast switching
z100% avalanche tested
zImproved dv/dt capability
zRoHS product
|
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R
特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS10N65T
On-Region Characteristics
VGS
Top 15V
10V
9V
8V
7V
10 6.5V
6V
5.5V
Bottom 5V
Notes:
1 1. 250μs pulse test
2. TC=25℃
1 10
VDS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
1.00
0.95
0.90
0.85 VGS=10V
0.80
0.75
0.70 VGS=20V
0.65 Note :Tj=25 ℃
0.60
0 2 4 6 8 10 12 14 16
ID [A]
Capacitance Characteristics
18
Transfer Characteristics
10
150℃
1
25℃
Notes:
1.250μs pulse test
2.VDS=40V
0.1
2 4 6 8 10
VGS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
10
1 150 ℃
25 ℃
Notes:
1. 250μs pulse test
2. VGS=0V
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD [V]
Gate Charge Characteristics
3x103
2x103
1x103
0
10-1
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
12
10
8
VDS=480V
VDS=300V
VDS=120V
6
4
2
100 101
V DS Drain-Source Voltage [V]
0
0 10 20 30
Qg Toltal Gate Charge [nC]
40
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 10N65 electronic component. |
Information | Total 10 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ 10N65.PDF Datasheet ] |
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