(PDF) L-7113P3C Datasheet - IR LED Phototransistor

Número de pieza	L-7113P3C
Descripción	IR LED Phototransistor
Fabricantes	ETC
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No Preview Available ! L-7113P3C IR LED Phototransistor Made with NPN silicon phototransistor chips. FEATURES Mechanically and spectrally matched to the L-7113 series infrared emitting LED Lamp Water clear lens RoHS compliant ELECTRICAL AND RADIANT CHARACTERISTICS TA=25℃ Symbol Parameter VBR CEO Collector-to-Emitter Breakdown Voltage VBR ECO Emitter-to-Collector Breakdown Voltage VCE (SAT) Collector-to-Emitter Saturation Voltage ICEO TR TF I (ON) Collector Dark Current Rise Time (10% to 90%) Fall Time (90% to 10%) On State Collector Current ABSOLUTE MAXIMUM RATING TA=25℃ Parameter Collector-to-Emitter Voltage Emitter-to-Collector Voltage Power Dissipation at (or below) 25℃ Free Air Temperature Operating Temperature Range Storage Temperature Range Lead Soldering Temperature (>5mm for 5 sec) DIMENSION T-1 3/4 (5mm) Round Min. Typ. Max. Unit Test Condition 30 - - V Ic = 100µA Ee=0mW/cm² 5 - - V IE = 100µA Ee=0mW/cm² - - 0.8 V Ic = 2mA Ee=20mW/cm² - - 100 nA VCE = 10V Ee=0mW/cm² - 15 - µs VCE=5V IC=1mA - 15 - µs RL=1KΩ 0.1 0.5 - mA VCE=5V Ee=1mW/cm² λ=940nm Max. Ratings 30V 5V 100mW -40℃ ~ +85℃ -40℃ ~ +85℃ 260℃ 1 page

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PDF L-7113P3C Data sheet ( Hoja de datos )