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U20C20A Datasheet PDF - Thinki Semiconductor

Part Number U20C20A
Description 20.0 Ampere Dual Common Cathode Ultra Fast Recovery Diodes
Manufacturers Thinki Semiconductor 
Logo Thinki Semiconductor Logo 



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U20C20A datasheet, circuit
U20C20C thru U20C60C
®
U20C20C thru U20C60C
Pb
Pb Free Plating Product
20.0 Ampere Dual Common Cathode Ultra Fast Recovery Diodes
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Inverters/Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
Mechanical Data
Case: Heatsink TO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202 method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Suffix "C"
Case
Negative
Common Anode
Suffix "A"
Case
Doubler
Tandem Polarity
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage VRRM
U20C20C
U20C20A
U20C20D
200
U20C40C
U20C40A
U20C40D
400
Maximum RMS Voltage
VRMS
140
280
Maximum DC Blocking Voltage
VDC 200
400
Maximum Average Forward Rectified
Current TC=125oC
IF(AV)
20.0
U20C60C
U20C60A
U20C60D
600
420
600
UNIT
V
V
V
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
200
175 A
Maximum Instantaneous Forward Voltage
@ 10.0 A
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
VF
IR
Trr
CJ
TJ, TSTG
0.98
120
1.3
10.0
250
35
70
-55 to +150
1.7
V
uA
uA
nS
pF
oC
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/

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