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STF6N60M2 Datasheet PDF - STMicroelectronics

Part Number STF6N60M2
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 



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STF6N60M2 datasheet, circuit
STF6N60M2, STP6N60M2,
STU6N60M2
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg
Power MOSFET in TO-220FP, TO-220 and IPAK packages
Datasheet - production data
TAB
3
2
1
TO-220FP
TAB
IPAK
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
, TAB
Features
Order codes
STF6N60M2
STP6N60M2
STU6N60M2
VDS @
TJmax
RDS(on)
max
ID
650 V 1.2 Ω 4.5 A
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
AM15572v1
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STF6N60M2
STP6N60M2
STU6N60M2
Table 1. Device summary
Marking
Package
6N60M2
TO-220FP
TO-220
IPAK
June 2013
This is information on a product in full production.
DocID024771 Rev 1
Packaging
Tube
1/18
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STF6N60M2 equivalent
STF6N60M2, STP6N60M2, STU6N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 19)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
-
-
-
-
-
4.5 A
18 A
1.6 V
274 ns
1.47 nC
10.7 A
376 ns
1.96 nC
10.5 A
DocID024771 Rev 1
5/18
18

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Information Total 18 Pages
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