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STB6N60M2 Datasheet PDF - STMicroelectronics

Part Number STB6N60M2
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 



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STB6N60M2 datasheet, circuit
STB6N60M2,
STD6N60M2
N-channel 600 V, 1.06 typ., 4.5 A MDmesh™ M2
Power MOSFETs in D2PAK and DPAK packages
Datasheet - production data
TAB
3
1
D2 PAK
TAB
3
1
DPAK
Features
Order code
STB6N60M2
STD6N60M2
VDS @
TJmax
650 V
RDS(on)
max
1.2
ID
4.5 A
Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
Order code
STB6N60M2
STD6N60M2
AM15572v1
Table 1. Device summary
Marking
Package
6N60M2
D2PAK
DPAK
Packing
Tape and reel
May 2016
This is information on a product in full production.
DocID024772 Rev 3
1/21
www.st.com

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STB6N60M2 equivalent
STB6N60M2, STD6N60M2
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 4.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 17)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4.5 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
-
-
-
-
-
4.5 A
18 A
1.6 V
274 ns
1.47 µC
10.7 A
376 ns
1.96 µC
10.5 A
DocID024772 Rev 3
5/21
21

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Information Total 21 Pages
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