UPD431008LE-15 Datasheet PDF - NEC
Part Number | UPD431008LE-15 | |
Description | 1M-BIT CMOS FAST STATIC RAM | |
Manufacturers | NEC | |
Logo | ||
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MOS INTEGRATED CIRCUIT
µ PD431008
1M-BIT CMOS FAST STATIC RAM
128K-WORD BY 8-BIT
Description
The µPD431008 is a high speed, low power, 1 048 576 bits (131 072 words by 8 bits) CMOS static RAM.
The µPD431008 is packed in 32-pin plastic SOJ.
Feature
q 131 072 words by 8 bits organization
q Fast access time 15, 17, 20 ns (MAX.)
q Output buffers control: OE
q Common I/O using three state outputs
q Fully static operation: no clock or refreshing to operate
q TTL compatible: all inputs and outputs
q Single +5 V power supply
Ordering Information
Part number
Package
µPD431008LE-15
µPD431008LE-17
µPD431008LE-20
32-pin plastic
SOJ (400 mil)
Access time
ns (MAX.)
15
17
20
Operating
supply current
mA (MAX.)
160
150
140
Standby
supply current
mA (MAX.)
10
Quality grade
Standard
Remark Operating supply current is 120 mA (MAX.) when this product is used at 50ns cycle time.
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
The information in this document is subject to change without notice.
Document No. IC-3242
(O.D.No. IC-8815)
Date Published July 1993 P
Printed in Japan
© 19923
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µPD431008
AC Characteristics (Recommended operating conditions unless otherwise noted)
AC Test Conditions
Input waveform (Rise/fall time <= 3 ns)
3.0 V
GND
1.5 V
Test points
1.5 V
Output waveform
1.5 V
Test points
1.5 V
Output load
AC Characteristics directed with the note should be measured with the output load shown in
Fig. 1 or Fig. 2.
Fig. 1
(For tAA, tACS, tOE, tOH)
+5 V
Fig. 2
(For tCHZ, tCLZ, tOHZ, tOLZ, tWHZ, tOW)
+5 V
I/O (Output)
255 Ω
480 Ω
I/O (Output)
30 pF
CL
255 Ω
480 Ω
5 pF
CL
Remark CL includes capacitances of the probe and jig, and stray capacitances.
5
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Information | Total 14 Pages | |
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