F21NM50N Datasheet PDF - STMicroelectronics
Part Number | F21NM50N | |
Description | STF21NM50N | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and F21NM50N download ( pdf file ) link at the bottom of this page. Total 18 Pages |
Preview 1 page No Preview Available ! STP/F21NM50N - STW21NM50N
STB21NM50N - STB21NM50N-1
N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247
Second generation MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STB21NM50N
)STB21NM50N-1
t(sSTF21NM50N
cSTP21NM50N
uSTW21NM50N
550V
550V
550V
550V
550V
< 0.19Ω
< 0.19Ω
< 0.19Ω
< 0.19Ω
< 0.19Ω
18A
18A
18A(1)
18A
18A
rod1. Limited by wire bonding
P■ 100% avalanche tested
te■ Low input capacitance and gate charge
le■ Low gate input resistance
bsoDescription
- OThe devices are realized with the second
)generation of MDmesh Technology. This
t(srevolutionary Power MOSFET associates a new
cvertical structure to the company's strip layout to
uyield one of the world's lowest on-resistance and
dgate charge. It is therefore suitable for the most
rodemanding high efficiency converters
te PApplications
Obsole■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
TO-247
Internal schematic diagram
Order codes
Part number
STB21NM50N
STB21NM50N-1
STF21NM50N
STP21NM50N
STW21NM50N
Marking
B21NM50N
B21NM50N
F21NM50N
P21NM50N
W21NM50N
Package
D2PAK
I2PAK
TO-220FP
TO-220
TO-247
Packaging
Tape & reel
Tube
Tube
Tube
Tube
January 2007
Rev 6
1/18
www.st.com
18
|
|
STP/F21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 18A, VGS = 0
18 A
72 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18A,
di/dt=100A/µs
VDD = 100V,
(see Figure 17.)
360 ns
5 µC
27 A
trr
t(s)Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18A,
di/dt=100A/µs
VDD = 100V, Tj = 150°C
(see Figure 17.)
uc1. Pulse width limited by safe operating area
Obsolete Product(s) - Obsolete Prod2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
464
6.5
27
ns
µC
A
5/18
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for F21NM50N electronic component. |
Information | Total 18 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ F21NM50N.PDF Datasheet ] |
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