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What is RB540VM-40?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "Schottky Barrier Diode".


RB540VM-40 Datasheet PDF - ROHM Semiconductor

Part Number RB540VM-40
Description Schottky Barrier Diode
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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Schottky Barrier Diode
RB540VM-40
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.25±0.1
(1)
0.1±0.1
    0.05
lLand Size Figure (Unit : mm)
0.9
lFeatures
1) Ultra small mold type
(UMD2)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
(2)
0.3±0.05
0.7±0.2
    0.1
ROHM : UMD2
JEDEC : SOD-323 JEITA : SC-90/A
: Manufacture date
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
fφ1.15.55±0.005.05
UMD2
lStructure (1) Cathode
(2) Anode
0.3±0.1
1.40±0.1
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
4.0±0.1
fφ1.10.055
Conditions
1.0±0.1
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
40 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load
60Hz half sin wave, Non-repetitive at
Ta=25ºC , 1cycle
Operating junction temperature
Tj
-
40
200
1000
150
V
mA
mA
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF IF=100mA - - 0.71 V
IR
VR=40V
- - 15 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A

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RB540VM-40 equivalent
RB540VM-40
lElectrical Characteristic Curves
Data Sheet
1000
Rth(j-a)
100
Rth(j-c)
Glass epoxy board mounted
IM=100mA
IF=0.2A
time
10
0.001 0.01 0.1
1ms300ms
1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
600
500
400 DC
IO
0A
0V
VR t
T
300 D = 1/2
200
100 Sin(θ=180)
D=t/T
VR=VRM/2
Tj=150°C
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
600
500
400
300
DC
D = 1/2
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
200
100 Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
20
18
16
14 AVE. : 11.2kV
12
10
8
6
4 AVE. : 1.9kV
2
0 C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.01 - Rev.A


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RB540VM-40 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
RB540VM-40The function is Schottky Barrier Diode. ROHM SemiconductorROHM Semiconductor

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