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What is RB238T100?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "Schottky Barrier Diode".


RB238T100 Datasheet PDF - ROHM Semiconductor

Part Number RB238T100
Description Schottky Barrier Diode
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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Schottky Barrier Diode
RB238T100
Data Sheet
lApplication
Switching power supply
lFeatures
1) Cathode common type
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
lDimensions (Unit : mm)
4.5±00..31
10.0±
0.3
0.1
f3.2±0.2
2.8±00..21
lStructure
1
1.2
1.3
0.8
2.45±0.5 2.45±0.5
(1) (2) (3)
2.6±0.5
0.75±00..015
ROHM : TO220FN
1 : Manufacture Date
(1) (2) (3)
Anode Cathode Anode
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
110 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load,Tc=85ºC Max., IO/2 per diode
60Hz half sin wave, Non-repetitive at
Ta=25ºC, 1cycle, per diode
Operating junction temperature
Tj
-
100
40
100
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical and Thermal Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Forward voltage
VF IF=20A
Reverse current
IR VR=100V
Thermal resistance
Rth(j-c)
Junction to case
Min. Typ. Max. Unit
- - 0.86 V
- - 20 mA
- - 2 °C / W
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A

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RB238T100 equivalent
RB238T100
lElectrical Characteristic Curves
Data Sheet
10
Rth(j-a)
Rth(j-c)
1
Glass epoxy board mounted
IM=100mA
IF=20A
time
0.1
0.001 0.01 0.1
1ms300ms
1 10
100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
100
80
60
40
IO
0A
0V
VR t
T
DC
D = 1/2
D=t/T
VR=VRM/2
Tj=150°C
20
Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
100
80
DC
60
D = 1/2
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
40
Sin(θ=180)
20
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
30
No destruction at 30kV
25
AVE. : 20.5kV
20
15
10
5
0 C=200pF C=100pF
R=0W
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.01 - Rev.A


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RB238T100 electronic component.


Information Total 6 Pages
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