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What is RB168L-60?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "Schottky Barrier Diode".


RB168L-60 Datasheet PDF - ROHM Semiconductor

Part Number RB168L-60
Description Schottky Barrier Diode
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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Schottky Barrier Diode
RB168L-60
lApplication
General rectification
lDimensions (Unit : mm)
2.6±0.15
Data Sheet
lLand Size Figure (Unit : mm)
2.0
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Super low IR
lConstruction
Silicon epitaxial planar type
12
0.1±0.02
1.5±0.2
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1 2 : Manufacture Date
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
PMDS
lStructure
φf11..555±00..0055
Cathode
Anode
0.3
2.9±0.1
4.0±0.1
φf11..555
2.8MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty0.5
60 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load, Tc=125ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
60
1
30
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward voltage
Reverse current
VF IF=1.0A - - 0.68 V
IR
VR=60V
- - 1.5 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A

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RB168L-60 equivalent
RB168L-60
lElectrical Characteristic Curves
Data Sheet
1000
100
Rth(j-a)
10 Rth(j-c)
Glass epoxy board mounted
IM=100mA
IF=1.0A
1
time
0.1
0.001 0.01 0.1
1ms300ms
1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
3
2 DC
IO
0A
0V
VR t
T
D = 1/2
1
Sin(θ=180)
D=t/T
VR=VRM/2
Tj=150°C
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
3
2 DC
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
D = 1/2
1
Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
30
No destruction at 30kV
25
20
15
10
AVE. : 4.1kV
5
0 C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.01 - Rev.A


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Featured Datasheets

Part NumberDescriptionMFRS
RB168L-60The function is Schottky Barrier Diode. ROHM SemiconductorROHM Semiconductor

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