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What is STD10N60M2?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-CHANNEL POWER MOSFET".


STD10N60M2 Datasheet PDF - STMicroelectronics

Part Number STD10N60M2
Description N-CHANNEL POWER MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STB10N60M2, STD10N60M2,
STP10N60M2, STU10N60M2
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg
Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages
Datasheet production data
TAB
3
1
D2 PAK
TAB
3
2
1
TO-220
TAB
3
1
DPAK
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
, TAB
Features
Order codes VDS @ TJmax
RDS(on)
max
ID
STB10N60M2
STD10N60M2
STP10N60M2
STU10N60M2
650 V
0.600 Ω 7.5 A
Extremely low gate charge
Lower RDS(on) x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
AM15572v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STB10N60M2
STD10N60M2
STP10N60M2
STU10N60M2
Table 1. Device summary
Marking
Package
2
D PAK
10N60M2
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2013
This is information on a product in full production.
DocID024710 Rev 2
1/24
www.st.com
24

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STD10N60M2 equivalent
STB10N60M2, STD10N60M2, STP10N60M2, STU10N60M2
Electrical characteristics
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 7.5 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.5 A, di/dt = 100 A/μs
VDD = 60 V (see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7.5 A, di/dt = 100 A/μs
VDD = 60 V, Tj = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
-
-
-
-
-
-
-
-
-
7.5 A
30 A
1.6 V
270 ns
2 μC
14.4 A
376 ns
2.8 μC
15 A
DocID024710 Rev 2
5/24


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for STD10N60M2 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
STD10N60M2The function is N-CHANNEL POWER MOSFET. STMicroelectronicsSTMicroelectronics

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