BTS50085-1TMA Datasheet PDF - Infineon Technologies
Part Number | BTS50085-1TMA | |
Description | Smart High-side High Current Power Switch | |
Manufacturers | Infineon Technologies | |
Logo | ||
There is a preview and BTS50085-1TMA download ( pdf file ) link at the bottom of this page. Total 18 Pages |
Preview 1 page No Preview Available ! PROFET® Data Sheet BTS50085-1TMA
Smart Highside High Current Power Switch
Reversave
Product Summary
• Reverse battery protection by self turn on of
power MOSFET
Features
• Overload protection
• Current limitation
• Short circuit protection
• Over temperature protection
• Over voltage protection (including load dump)
• Clamp of negative voltage at output
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : IIS
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Diagnostic feedback with load current sense
• Open load detection via current sense
PG-TO220-7-4
• Loss of Vbb protection2)
• Electrostatic discharge (ESD) protection
• Green product (RoHS compliant)
• AEC qualified
7
Application
• Power switch with current sense diagnostic
1
SMD
feedback for up to 48 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
70 V
62 V
5.0 ... 58 V
9 mΩ
44 A
90 A
13 000
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protection functions.
Voltage
source
Voltage
sensor
3 IN
ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
R bb
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT 1,2,6,7
IL
Load
I IN Temperature
sensor
VIN
V IS
Logic GND
I IS
IS
5
RIS
PROFET
Load GND
1) With additional external diode.
2) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1
2008-Jan-24
|
|
Data Sheet BTS50085-1TMA
Parameter and Conditions
at Tj = -40 ... +150 °C, Vbb = 24 V unless otherwise specified
Symbol
Protection Functions16)
Short circuit current limit (Tab to pins 1,2,6,7)
VON = 24 V, time until shutdown max. 300 µs Tc =-40°C:
see page 8 and 13
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC) 17)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. over voltage)
IL= 40 mA
Short circuit shutdown detection voltage 17)
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
IL(SC)
IL(SC)
IL(SC)
td(SC)
VON(CL)
VON(SC)
Tjt
∆Tjt
Values
Unit
min typ max
-- 90 180 A
-- 90
--
50 80
--
80 -- 350 µs
62 65 72 V
-- 6
150 --
-- 10
-- V
-- °C
-- K
Reverse Battery
Reverse battery voltage 18)
On-state resistance (Pins 1,2,6,7 to pin 4)
Vbb =-12V, VIN=0, IL=- 20 A, RIS =1 kΩ
Integrated resistor in Vbb line
Tj = 25°C:
Tj = 150°C:
Tj = 25C:
Tj =150°C:
-Vbb
RON(rev)
Rbb
-- -- 42 V
-- 8.8 10.5 mΩ
-- 20
90 120 135
105 125 150
Ω
16 ) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
17) not subject to production test, specified by design.
18) The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! To reduce the
power dissipation at the integrated Rbb resistor an input resistor is recommended as described on page 9.
Infineon Technologies AG
Page 5
2008-Jan-24
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for BTS50085-1TMA electronic component. |
Information | Total 18 Pages | |
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Download | [ BTS50085-1TMA.PDF Datasheet ] |
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