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PDF IRFB3206GPbF Data sheet ( Hoja de datos )
| Número de pieza | IRFB3206GPbF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
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PD - 96210
IRFB3206GPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
60V
2.4m:
3.0m:
c210A
S ID (Package Limited) 120A
D
DS
G
TO-220AB
IRFB3206GPbF
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
fPeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
eSingle Pulse Avalanche Energy
ÃdAvalanche Current
dRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
Parameter
jJunction-to-Case
RθCS
Case-to-Sink, Flat Greased Surface , TO-220
RθJA Junction-to-Ambient, TO-220
D
Drain
S
Source
Max.
210
150
120
840
300
2.0
± 20
5.0
-55 to + 175
300
x x10lbf in (1.1N m)
170
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
Max.
0.50
–––
62
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
www.irf.com
1
1/06/09
1 page  
IRFB3206GPbF
1
D = 0.50
0.1
0.01
0.001
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
τJ τJ
τ1 τ1
R1R 1
CiC= iτ=i/τRi/iRi
R2R 2
τ2 τ2
R3R3 Ri (°C/W) τι (sec)
τCτ 0.106416 0.0001
τ3τ3 0.201878 0.001262
0.190923 0.011922
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
10 0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-02
1.0E-01
200
TOP
Single Pulse
BOTTOM 1% Duty Cycle
160 ID = 120A
120
80
40
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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