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PDF TLE4921-3U Data sheet ( Hoja de datos )
| Número de pieza | TLE4921-3U | |
| Descripción | Dynamic Differential Hall Effect Sensor IC | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Dynamic Differential Hall Effect Sensor IC
TLE 4921-3U
Bipolar IC
Features
• Advanced performance
• High sensitivity
• Symmetrical thresholds
• High piezo resistivity
• Reduced power consumption
• South and north pole pre-induction possible
• AC coupled
• Digital output signal
• Two-wire and three-wire configuration possible
• Large temperature range
• Large airgap
• Low cut-off frequency
• Protection against overvoltage
• Protection against reversed polarity
• Output protection against electrical disturbances
P-SSO-4-1
Type
TLE 4921-3U
Marking
21C3U
Ordering Code
Q67006-A9171
Package
P-SSO-4-1
The differential Hall Effect sensor TLE 4921-3U provides a high sensitivity and a superior
stability over temperature and symmetrical thresholds in order to achieve a stable duty
cycle. TLE 4921-3U is particularly suitable for rotational speed detection and timing
applications of ferromagnetic toothed wheels such as anti-lock braking systems,
transmissions, crankshafts, etc. The integrated circuit (based on Hall effect) provides a
digital signal output with frequency proportional to the speed of rotation. Unlike other
rotational sensors differential Hall ICs are not influenced by radial vibration within the
effective airgap of the sensor and require no external signal processing.
Data Sheet 1 2000-07-01
1 page  
TLE 4921-3U
Absolute Maximum Ratings
Tj = – 40 to 150 °C
Parameter
Symbol
Limit Values
Supply voltage
Output voltage
Output current
Output reverse current
Capacitor voltage
Junction temperature
Junction temperature
Junction temperature
Junction temperature
Storage temperature
Thermal resistance
P-SSO-4-1
VS
VQ
IQ
– IQ
VC
Tj
Tj
Tj
Tj
TS
Rth JA
min.
– 351)
– 0.7
–
–
– 0.3
–
–
–
–
– 40
–
max.
30
30
50
50
3
150
160
170
210
150
190
Current through input-
protection device
Current through output-
protection device
ISZ
IQZ
–
–
200
200
Unit Remarks
V–
V–
mA –
mA –
V–
°C 5000 h
°C 2500 h
°C 1000 h
°C 40 h
°C –
K/W –
mA t < 2 ms; v = 0.1
mA t < 2 ms; v = 0.1
Electro Magnetic Compatibility
ref. DIN 40839 part 1; test circuit 1
Testpulse 1
Testpulse 2
Testpulse 3a
Testpulse 3b
Testpulse 4
Testpulse 5
VLD
VLD
VLD
VLD
VLD
VLD
– 100
– 150
–7
1) Reverse current < 10 mA
100
100
120
V td = 2 ms
V td = 0.05 ms
V td = 0.1 µs
V td = 0.1 µs
V td ≤ 20 s
V td = 400 ms;
RP = 400 Ω
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Data Sheet 5 2000-07-01
5 Page 
TLE 4921-3U
Two-wire-application
1
4 C VS Q 2
CF
470 nF
GND
3
Line
RL
VS
VSIGNAL
RS
Sensor
for example : R L= 330 Ω
R S = 120 Ω
Mainframe
AES01263
Three-wire-application
1
4 C VS Q 2
CF
470 nF
GND
3
R p Line
4.7 nF
4.7 nF
VS
RL
VSIGNAL
for example : R L= 330 Ω
R P = 0 ... 330 Ω
Sensor
Mainframe
AES01264
Figure 9 Application Circuits
Data Sheet
11
2000-07-01
11 Page | ||
| Páginas | Total 19 Páginas | |
| PDF Descargar | [ Datasheet TLE4921-3U.PDF ] | |
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