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What is GA200TS60U?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT".


GA200TS60U Datasheet PDF - International Rectifier

Part Number GA200TS60U
Description HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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PRELIMINARY
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFREDantiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
PD -5.058B
GA200TS60U
Ultra-FastTM Speed IGBT
VCES = 600V
VCE(on) typ. = 1.8V
@VGE = 15V, IC = 200A
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current
Peak Switching Current‚
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
600
200
400
400
400
±20
2500
625
325
-40 to +150
-40 to +125
Units
V
A
V
W
°C
Thermal / Mechanical Characteristics
RθJC
RθJC
RθCS
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3ƒ
Weight of Module
www.irf.com
Typ.
0.1
200
Max.
0.20
0.35
4.0
3.0
Units
°C/W
N. m
g
1
3/20/98

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GA200TS60U equivalent
40000
30000
20000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
10000
Coes
Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
GA200TS60U
20
VCC = 400V
I C = 135A
16
12
8
4
0
0 200 400 600 800 1000
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
40
VCC = 360V
VGE = 15V
TJ = 125 °C
IC = 200A
35
30
25
1000 RGG1=2=7Oh;RmG2 = 0
VGE = 15V
VCC = 360V
100
10
IC = 400 A
IC = 200 A
IC = 100 A
20
0
10 20 30 40 50
RG , Gate Resistance (O( hm))
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GA200TS60U electronic component.


Information Total 10 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
GA200TS60UThe function is HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT. International RectifierInternational Rectifier
GA200TS60UPBFThe function is IGBT ( Insulated Gate Bipolar Transistor ). Vishay SiliconixVishay Siliconix
GA200TS60UXThe function is Ultra-FastTM Speed IGBT. International RectifierInternational Rectifier

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