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Datasheet G8522 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | G8522 | GaAs PIN photodiode |  Hamamatsu Corporation | diode |
| 2 | G8522-01 | GaAs PIN photodiode | Hamamatsu Corporation | diode |
| 3 | G8522-02 | GaAs PIN photodiode | Hamamatsu Corporation | diode |
| 4 | G8522-03 | GaAs PIN photodiode | Hamamatsu Corporation | diode |
G85 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | G8522 | GaAs PIN photodiode Hamamatsu Corporation diode | | |
| 2 | G8522-01 | GaAs PIN photodiode Hamamatsu Corporation diode | | |
| 3 | G8522-02 | GaAs PIN photodiode Hamamatsu Corporation diode | | |
| 4 | G8522-03 | GaAs PIN photodiode Hamamatsu Corporation diode | | |
| 5 | G8550 | PNP EPITAXIAL TRANSISTOR
CORPORATION
G8550
Description Features P N P E P ITAX I A L T R AN S IS T O R
ISSUED DATE :2004/12/27 REVISED DATE :
The G8550 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to G80  GTM transistor | | |
| 6 | G8550S | PNP EPITAXIAL TRANSISTOR
CORPORATION
G8550S
Description Features
PNP EPITAXIAL PLANAR TANSISTOR
ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B
The G8550S is designed for general purpose amplifier applications.
* High DC Current gain: 100-500 at IC= 150mA *Complementary to G8050S
Package Dimension GTM transistor | | |
| 7 | G8551 | PNP EPITAXIAL TRANSISTOR
CORPORATION
G8551
Description Features P N P E P ITAX I A L T R AN S IS T O R
ISSUED DATE :2004/12/27 REVISED DATE :
The G8551 is designed for use in 2W output amplifier of portable radios in class B push-pull operation. *High Collector current (IC: 1.5A) *Complementary to G80 GTM transistor | |
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