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PDF KF11N50P Data sheet ( Hoja de datos )
| Número de pieza | KF11N50P | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 500V, ID= 11A
Drain-Source ON Resistance :
RDS(ON)=0.52 (Max) @VGS = 10V
Qg(typ.) = 26nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
KF11N50P KF11N50F
Drain-Source Voltage
VDSS
500
Gate-Source Voltage
VGSS
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
11 11*
7 7*
33 33*
400
6.6
4.5
Drain Power
Dissipation
Tc=25
Derate above 25
PD
178
1.43
46.3
0.37
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg -55 150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
0.7
62.5
2.7
62.5
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KF11N50P/F
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KF11N50P
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
KF11N50F
AC
E
LM
D
NN
123
R
H
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 10.16 +_ 0.2
B 15.87 +_ 0.2
C 2.54 +_ 0.2
D 0.8 +_ 0.1
E 3.18 +_ 0.1
F 3.3 +_ 0.1
G 12.57 +_ 0.2
H 0.5 +_ 0.1
J 13.0 +_ 0.5
K 3.23 +_ 0.1
L 1.47 MAX
M 1.47 MAX
N 2.54 +_ 0.2
O 6.68 +_ 0.2
Q 4.7 +_ 0.2
R 2.76 +_ 0.2
EQUIVALENT CIRCUIT
D
TO-220IS (1)
G
2011. 8. 31
S
Revision No : 0
1/7
1 page  
KF11N50P/F
Fig12. Transient Thermal Response Curve
100
Duty=0.5
(KF11N50P)
0.2
10-1 0.1
0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4
10-3 10-2
TIME (sec)
PDM
t1
t2
- Rth(j-c) = 0.6 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
Fig13. Transient Thermal Response Curve
(KF11N50F)
101
100 Duty=0.5
0.2
0.1
10-1 0.05
0.02
0.01
10-2
10-5
Single Pulse
10-4 10-3
10-2
TIME (sec)
PDM
t1
t2
- Rth(j-c) = 2.51 C/W Max.
- Duty Factor, D= t1/t2
10-1 100 101
2011. 8. 31
Revision No : 0
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KF11N50P.PDF ] | |
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