FQP12N65 Datasheet PDF - TOBA
Part Number | FQP12N65 | |
Description | N-Channel MOSFET | |
Manufacturers | TOBA | |
Logo | ||
There is a preview and FQP12N65 download ( pdf file ) link at the bottom of this page. Total 4 Pages |
Preview 1 page No Preview Available ! 极限参数(除非特殊说明,TC=25°C)
参数名称
漏源电压
栅源电压
漏极电流
漏极脉冲电流
TC=25°C
TC=100°C
耗散功率(TC=25°C)
- 大于 25°C 每摄氏度减少
单脉冲雪崩能量(注 1)
工作结温范围
贮存温度范围
符号
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
参数范围
SVD12N65T
SVD12N65F
650
±30
12
7.6
48
225 51
1.8 0.41
1074
-55~+150
-55~+150
热阻特性
参数名称
芯片对管壳热阻
芯片对环境的热阻
符号
RθJC
RθJA
参数范围
SVD12N65T
SVD12N65F
0.56 2.44
62.5 120
电性参数(除非特殊说明,TC=25°C)
参数
漏源击穿电压
漏源漏电流
栅源漏电流
栅极开启电压
导通电阻
输入电容
输出电容
反向传输电容
开启延迟时间
开启上升时间
关断延迟时间
关断下降时间
栅极电荷量
栅极-源极电荷量
栅极-漏极电荷量
符号
BBVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
测试条件
VGS=0V,ID=250µA
VDS=650V,VGS=0V
VGS=±30V,VDS=0V
VGS=VDS,ID=250µA
VGS=10V,ID=6.0A
VDS=25V,VGS=0V,
f=1.0MHz
VDD=325V,ID=12A,
RG=25Ω
(注 2,3)
VDS=520V,ID=12A,
VGS=10V
(注 2,3)
最小值
650
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
典型值
--
--
--
--
0.64
1830
155
2
50
49
310
54
51.7
9.6
18.6
最大值
--
1.0
±100
4.0
0.8
--
--
--
--
--
--
--
--
--
--
单位
V
V
A
A
W
W/°C
mJ
°C
°C
单位
°C/W
°C/W
单位
V
µA
nA
V
Ω
pF
ns
nC
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQP12N65 electronic component. |
Information | Total 4 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ FQP12N65.PDF Datasheet ] |
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