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Número de pieza | GBPC35W | |
Descripción | Glass Passivated Single-Phase Bridge Rectifier | |
Fabricantes | Naina Semiconductor | |
Logotipo | ||
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GBPC35-
GBPC35W
Glass Passivated Single-Phase Bridge Rectifier, 35A
Features
• Glass passivated chip junction
• Low reverse leakage current
• High surge current capability
• Low power loss
• High efficiency
• Electrically isolated metal case for
maximum heat dissipation
Mechanical Data
• Case: Molded plastic body with heatsink
• Terminals: Plated lead Solderable (Add “W” suffix for Wire Leads)
• Polarity: As marked on Case
• Mounting: Through hole for #10 Screw
• Mounting Torque: 20 in-lbs max.
• Weight: 18 grams (approx)
Maximum Ratings & Electrical Characteristics (TA = 250C unless otherwise noted)
Parameter
GBPC35(W)
Symbol
Units
005 01 02 04 06 08 10 12
Maximum repetitive peak reverse voltage
VRRM
50 100 200 400 600 800 1000 1200
V
Maximum RMS voltage
VRMS
35 70 140 280 420 560 700 840
V
Maximum DC blocking voltage
VDC 50 100 200 400 600 800 1000 1200 V
Average rectified output current
IO
35 A
Non-repetitive peak forward surge current,
single half sine-wave superimposed on rated
IFSM
400
A
load (JEDEC method)
DC forward voltage drop per element @17.5A
Peak reverse current at rated DC TC = 25oC
blocking voltage
TC = 125oC
VF
IR
1.1 V
5.0
µA
500
Typical junction capacitance (Note 1)
Typical thermal resistance (Note 2)
CJ
RθJ-C
300 pF
1.4 oC/W
RMS isolation voltage
Operating and Storage temperature
VISO
TJ, TSTG
2500
-55 to +150
V
oC
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.
(2) Thermal resistance from Junction to Case per leg
1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
[email protected] • www.nainasemi.com
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet GBPC35W.PDF ] |
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