UM1556 Datasheet PDF - STMicroelectronics
| Part Number | UM1556 | |
| Description | VIPower M0-5 and M0-5Enhanced high-side drivers User manual | |
| Manufacturers | STMicroelectronics | |
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UM1556
User manual
VIPower M0-5 and M0-5Enhanced
high-side drivers
Introduction
The aim of this document is to give the design engineer a comprehensive “tool kit” to better
understand the behavior of VIPower high side switches, allowing easier design and saving
time and money.
Today’s VIPower high side switches represent the 5th generation of smart power drivers (the
so called M0-5). In this latest generation of drivers, all the experience and know-how derived
from previous generations have been implemented in order to improve robustness, increase
functionality and raise package density while maintaining lower prices.
The complexity of a modern High Side Driver (HSD) is still relatively low compared to many
other logic ICs. However, the combination of digital logic functions with analog power
structures supplied by an unstabilized automotive battery system across a wide temperature
range is very challenging for such a device.
The M0-5 components today meet all the above criteria, providing an optimal
price/performance ratio by offering the highest performance and robustness at excellent
prices.
September 2013
Doc ID 023520 Rev 2
1/87
www.st.com
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UM1556
List of figures
List of figures
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Figure 47.
Monolithic digital HSD - application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Monolithic analogue HSD - application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Hybrid analogue HSD – application schematic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Voltage levels during reverse battery – resistor protection . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logical levels check . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Voltage levels during reverse battery using diode-resistor protection network. . . . . . . . . . 12
Positive ISO pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Negative ISO pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Voltage levels during reverse battery – MOSFET protection . . . . . . . . . . . . . . . . . . . . . . . 14
Hybrid HSD - reverse battery protection with self switch-on of the MOSFET. . . . . . . . . . . 16
Example - Self switch-on of MOSFET eliminated by Dgnd. . . . . . . . . . . . . . . . . . . . . . . . . 16
ISO-pulse transfer to I/O pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Open load/short to Vcc condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Open load/short to Vcc condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
M0-5 – “Soft” short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
M0-5 – “Hard” short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
M0-5Enhanced – “Soft” short to GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
M0-5Enhanced – “Hard” short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
M0-5 – “Soft” short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
M0-5 – “Hard” short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
M0-5Enhanced – “Soft” short to GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
M0-5Enhanced – “Hard” short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
System reaction time comparison. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
M0-5 High Side Driver with analogue current sense – block diagram . . . . . . . . . . . . . . . . 23
M0-5 current sense simplified block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
VSENSE vs IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
VSENSE vs VOUT @ IOUT=ILIMH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Current sense resistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Switchable current sense resistor – example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
VSENSE measurement. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
VND5012A current sense voltage behavior – hard short to GND occurred (20 mΩ), thermal
shutdown was reached 344 ms after short-circuit to GND . . . . . . . . . . . . . . . . . . . . . . . . . 35
Analogue HSD – Circuit for open load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . 36
Analogue HSD – Open load detection in off-state (M0-5Enhanced) . . . . . . . . . . . . . . . . . 36
Digital HSD diagnostics – timing overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Inductive load – HSD turn-on phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Inductive load – turn-on example: VNQ5E050AK, L=260 mH, R=81 Ω . . . . . . . . . . . . . . . 40
Inductive load – HSD turn-off phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Inductive load – turn off example: VNQ5E050AK, L=260 mH, R=81 Ω . . . . . . . . . . . . . . . 43
Maximum turn-off current versus inductance – VND5E160AJ datasheet. . . . . . . . . . . . . . 46
Maximum demagnetization energy – VND5E160A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Demagnetization energy measurement – VND5E160AJ, relay 260 mH . . . . . . . . . . . . . . 47
External clamping - transil and diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Transil – V/A characteristic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Peak pulse power vs pulse time (for transil 600 W@10/1000 µs series) . . . . . . . . . . . . . . 54
Equivalent pulses giving the same power dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
Maximum peak power as a function of initial temperature of the transil . . . . . . . . . . . . . . . 54
Maximum turn-off current versus inductance – VN5E025AJ datasheet . . . . . . . . . . . . . . . 57
Doc ID 023520 Rev 2
5/87
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