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What is STB31N65M5?

This electronic component, produced by the manufacturer "STMicroelectronics", performs the same function as "N-channel Power MOSFET".


STB31N65M5 Datasheet PDF - STMicroelectronics

Part Number STB31N65M5
Description N-channel Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 


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STB31N65M5, STF31N65M5, STFI31N65M5,
STP31N65M5, STW31N65M5
N-channel 650 V, 0.124 typ., 22 A MDmesh™ V Power MOSFET
22
in D PAK, TO-220FP, I PakFP, TO-220 and TO-247 packages
Datasheet production data
Features
TAB
2
3
1
D2PAK
TAB
3
2
1
TO-220FP
12 3
I2PakFP
3
2
1
TO-220
3
2
1
TO-247
Figure 1. Internal schematic diagram
Order codes VDSS @ TJmax RDS(on) max ID
STB31N65M5
STF31N65M5
STFI31N65M5
710 V
< 0.148 Ω 22 A
STP31N65M5
STW31N65M5
Worldwide best RDS(on) * area
Higher VDSS rating and high dv/dt capability
Excellent switching performance
100% avalanche tested
' Ć7$%
Applications
Switching applications
* 
6 
$0Y
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STB31N65M5
STF31N65M5
STFI31N65M5
STP31N65M5
STW31N65M5
Table 1. Device summary
Marking
Package
2
D PAK
31N65M5
TO-220FP
2
I PakFP
TO-220
TO-247
Packaging
Tape and reel
Tube
March 2013
This is information on a product in full production.
DocID022848 Rev 3
1/25
www.st.com
25

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STB31N65M5 equivalent
STB31N65M5, STF31N65M5, STFI31N65M5, STP31N65M5, STW31N65M5 Electrical characteristics
2 Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source
on-resistance
VGS = 10 V, ID = 11 A
Min. Typ. Max. Unit
650 V
1 μA
100 μA
± 100 nA
3 4 5V
0.124 0.148 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
1865
pF
- 45 - pF
4.2 pF
(1)
Co(tr)
Equivalent
capacitance time
related
Equivalent
(2)
Co(er) capacitance energy
related
VDS = 0 to 520 V, VGS = 0
- 146 - pF
- 43 - pF
Intrinsic gate
RG resistance
f = 1 MHz open drain
- 2.8 - Ω
Qg Total gate charge
VDD = 520 V, ID = 11 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
45 nC
- 11.5 - nC
20 nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
DocID022848 Rev 3
5/25


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Featured Datasheets

Part NumberDescriptionMFRS
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