GDU90-20722 Datasheet PDF - Dynex Semiconductor
Part Number | GDU90-20722 | |
Description | Gate Drive Unit | |
Manufacturers | Dynex Semiconductor | |
Logo | ||
There is a preview and GDU90-20722 download ( pdf file ) link at the bottom of this page. Total 4 Pages |
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GDU 90-20722
Gate Drive Unit
Replaces March 1998 version, DS4568-3.1
DS4568-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
IFGM
IG(ON)
dIGQ/dt
40A
10A
50A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V1 = +5V
Test circuit GTO
V2 = +15V
DG858BW
V3 = -15V
GDU connection to GTO
Test circuit emitter and gate drive emitter
500mm CO - AX cable type RC5327230
(2 cables in parallel)
Honeywell sweetspot HFE 4020 - 013
Test circuit emitter current
Test circuit receiver and gate drive receiver
30mA
Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
I +5V PSU current
V1
IV2 +15V PSU current
IV3
V1(Min)
V
2(Min)
V
3(Min)
IFGM
IG(ON)
dIFG/dt
dI /dt
GQ
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, IT = 3000A
GTO Tj= 125˚C
-
-
-
-
-
Measured 10 - 75% I
FGM
I = 3000A, 90% I - 50% I
T
G(ON)
GQM
Min. Typ. Max. Units
- - 5.5 A
- - 0.70 A
--
3.8 -
14.0 -
14.0 -
40 -
- 10
- 40
- 50
12 A
-V
-V
-V
-A
-A
- A/µs
- A/µs
1/4
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GDU90-20722 electronic component. |
Information | Total 4 Pages | |
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Download | [ GDU90-20722.PDF Datasheet ] |
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