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What is GDU90-20722?

This electronic component, produced by the manufacturer "Dynex Semiconductor", performs the same function as "Gate Drive Unit".


GDU90-20722 Datasheet PDF - Dynex Semiconductor

Part Number GDU90-20722
Description Gate Drive Unit
Manufacturers Dynex Semiconductor 
Logo Dynex Semiconductor Logo 


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GDU 90 20722
GDU 90-20722
Gate Drive Unit
Replaces March 1998 version, DS4568-3.1
DS4568-4.0 January 2000
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
APPLICATIONS
s Used with Gate Turn-Off Thyristors in high current switching
applications
KEY PARAMETERS
IFGM
IG(ON)
dIGQ/dt
40A
10A
50A/µs
CONDITIONS - (UNLESS STATED OTHERWISE)
V1 = +5V
Test circuit GTO
V2 = +15V
DG858BW
V3 = -15V
GDU connection to GTO
Test circuit emitter and gate drive emitter
500mm CO - AX cable type RC5327230
(2 cables in parallel)
Honeywell sweetspot HFE 4020 - 013
Test circuit emitter current
Test circuit receiver and gate drive receiver
30mA
Honeywell sweetspot HFD 3029 - 002
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
I +5V PSU current
V1
IV2 +15V PSU current
IV3
V1(Min)
V
2(Min)
V
3(Min)
IFGM
IG(ON)
dIFG/dt
dI /dt
GQ
-15V PSU current
+5V PSU minimum
+15V PSU minimum
-15V PSU minimum
Peak forward gate current
On-state gate current
Rate of rise of positive gate current
Rate of rise of negative gate current
Conditions
500Hz, 50% duty cycle
500Hz
500Hz, IT = 3000A
GTO Tj= 125˚C
-
-
-
-
-
Measured 10 - 75% I
FGM
I = 3000A, 90% I - 50% I
T
G(ON)
GQM
Min. Typ. Max. Units
- - 5.5 A
- - 0.70 A
--
3.8 -
14.0 -
14.0 -
40 -
- 10
- 40
- 50
12 A
-V
-V
-V
-A
-A
- A/µs
- A/µs
1/4


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GDU90-20722 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
GDU90-20721The function is Gate Drive Unit. Dynex SemiconductorDynex Semiconductor
GDU90-20722The function is Gate Drive Unit. Dynex SemiconductorDynex Semiconductor

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