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Datasheet 1N6011 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 1N6011 | Axial-Leaded 500 mW Zener Diodes WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N5985 thru 1N6031-1, e3 DO-35 Axial-Leaded 500 mW Zener Diodes
DESCRIPTION
The popular 1N5985 thru 1N6031 series of 0.5 watt Zener Voltage Regulators provides a selection from 2.4 to 200 volts in standard 5% or 10% tolerances as well as tighter tolerances i | Microsemi | diode |
2 | 1N6011 | 500mW ZENER DIODES 1N5985-1N6031
High-reliability discrete products and engineering services since 1977
500mW ZENER DIODES
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and | Digitron Semiconductors | diode |
3 | 1N6011 | Diode Zener Single 30V 20% 500mW 2-Pin DO-35 | New Jersey Semiconductor | diode |
4 | 1N6011A | Zener Diode, Rectifier 1N5985A - 1N6031A
VZ : 2.4 - 200 V PD : 500 mW
FEATURES :
* Extensive selection from 2.0 V to 200 V * Standard zener voltage tolerance is ± 10%. * Other tolerances are available upon request. * Pb / RoHS Free
MECHANICAL DATA :
* Case: DO-35 Glass Case * Weight: approx. 0.13g
Certificate TH97/10561 | EIC | diode |
5 | 1N6011A | Diode Zener Single 30V 10% 500mW 2-Pin DO-35 | New Jersey Semiconductor | diode |
1N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 1N60 | Diode, Rectifier American Microsemiconductor diode | | |
2 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
3 | 1N60 | GOLD BONDED GERMANIUM DIODE ETC diode | | |
4 | 1N60 | Zender Diodes American Microsemiconductor diode | | |
5 | 1N60 | Germanium Glass Diodes International Semiconductor diode | | |
6 | 1N60 | Germanium Glass Diodes Central Semiconductor diode | | |
7 | 1N60 | Schottky Barrier Diode FMS
1N60/1N60P
Schottky Barrier Diode
Features
1. High reliability 2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25 Parameter Repetitive peak reverse voltage Peak f Formosa MS diode | |
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