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What is GS72116AT-10?

This electronic component, produced by the manufacturer "ETC", performs the same function as "128K x 16 2Mb Asynchronous SRAM".


GS72116AT-10 Datasheet PDF - ETC

Part Number GS72116AT-10
Description 128K x 16 2Mb Asynchronous SRAM
Manufacturers ETC 
Logo ETC Logo 


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GS72116ATP/J/T/U
SOJ, TSOP, FP-BGA, TQFP
128K x 16
Commercial Temp
Industrial Temp
2Mb Asynchronous SRAM
7, 8, 10, 12 ns
3.3 V VDD
Center VDD and VSS
Features
• Fast access time: 7, 8, 10, 12 ns
• CMOS low power operation: 145/125/100/85 mA at
minimum cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Byte control
• Fully static operation
• Industrial Temperature Option: 40° to 85°C
• Package line up
J: 400 mil, 44-pin SOJ package
TP: 400 mil, 44-pin TSOP Type II package
T: 10 mm x 10 mm, 44-pin TQFP
U: 6 mm x 8 mm Fine Pitch Ball Grid Array package
Description
The GS72116A is a high speed CMOS Static RAM organized
as 131,072 words by 16 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a sin-
gle 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS72116A is available in a 6 mm x 8 mm
Fine Pitch BGA package, a 10 mm x 10 mm TQFP package, as
well as in 400 mil SOJ and 400 mil TSOP Type-II packages.
SOJ 128K x 16-Pin Configuration
A4 1
A3 2
A2 3
A1 4
A0 5
Top view
CE 6
DQ1 7
DQ2 8
DQ3 9
DQ4 10
VDD 11
44-pin
VSS 12
DQ5 13
SOJ
DQ6 14
DQ7 15
DQ8 16
WE 17
A15 18
A14 19
A13 20
A12 21
A16 22
Package J
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
DQ16
DQ15
DQ14
DQ13
VSS
VDD
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10
A11
NC
Pin Descriptions
Symbol
A0A16
DQ1DQ16
CE
LB
UB
WE
OE
VDD
VSS
NC
Description
Address input
Data input/output
Chip enable input
Lower byte enable input
(DQ1 to DQ8)
Upper byte enable input
(DQ9 to DQ16)
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
Rev: 1.04a 10/2002
1/18
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.

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GS72116AT-10 equivalent
GS72116ATP/J/T/U
Recommended Operating Conditions
Parameter
Supply Voltage for -7/-8/-10/12
Input High Voltage
Input Low Voltage
Ambient Temperature,
Commercial Range
Ambient Temperature,
Industrial Range
Symbol
VDD
VIH
VIL
TAc
TAI
Min
3.0
2.0
0.3
0
40
Typ
3.3
Note:
1. Input overshoot voltage should be less than VDD +2 V and not exceed 20 ns.
2. Input undershoot voltage should be greater than 2 V and not exceed 20 ns.
Max
3.6
VDD +0.3
0.8
70
85
Unit
V
V
V
oC
oC
Capacitance
Parameter
Symbol
Test Condition
Input Capacitance
Output Capacitance
CIN
COUT
VIN = 0 V
VOUT = 0 V
Notes:
1. Tested at TA = 25°C, f = 1 MHz
2. These parameters are sampled and are not 100% tested.
DC I/O Pin Characteristics
Parameter
Symbol
Input Leakage
Current
IIL
Output Leakage
Current
ILO
Output High Voltage
Output Low Voltage
VOH
VOL
Test Conditions
VIN = 0 to VDD
Output High Z
VOUT = 0 to VDD
IOH = 4mA
ILO = +4mA
Max
5
7
Min
1 uA
1 uA
2.4
Unit
pF
pF
Max
1 uA
1 uA
0.4 V
Rev: 1.04a 10/2002
5/18
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.


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