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What is GS71108ASJ-8I?

This electronic component, produced by the manufacturer "ETC", performs the same function as "128K x 8 1Mb Asynchronous SRAM".


GS71108ASJ-8I Datasheet PDF - ETC

Part Number GS71108ASJ-8I
Description 128K x 8 1Mb Asynchronous SRAM
Manufacturers ETC 
Logo ETC Logo 


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GS71108ATP/J/SJ/U
SOJ, TSOP, FP-BGA
Commercial Temp
Industrial Temp
Features
128K x 8
1Mb Asynchronous SRAM
7, 8, 10, 12 ns
3.3 V VDD
Center VDD and VSS
SOJ & TSOP-II 128K x 8-Pin Configuration
• Fast access time: 7, 8, 10, 12 ns
• CMOS low power operation: 140/120/95/80 mA at minimum
cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option: 40° to 85°C
• Package line up
J: 400 mil, 32-pin SOJ package
TP: 400 mil, 32-pin TSOP Type II package
SJ: 300 mil, 32-pin SOJ package
U: 6 mm x 8 mm Fine Pitch Ball Grid Array package
Description
The GS71108A is a high speed CMOS Static RAM organized
as 131,072 words by 8 bits. Static design eliminates the need
for external clocks or timing strobes. The GS operates on a
single 3.3 V power supply and all inputs and outputs are TTL-
compatible. The GS71108A is available in a 6 mm x 8 mm
Fine Pitch BGA package, as well as in 300 mil and 400 mil
SOJ and 400 mil TSOP Type-II packages.
A3 1
32 A4
A2 2
31 A5
A1 3
30 A6
A0 4
29 A7
CE 5 32-pin
28 OE
DQ1
DQ2
6
7 400 mil SOJ
27 DQ8
26 DQ7
VDD 8
&
25 VSS
VSS 9 300 mil SOJ 24 VDD
DQ3
DQ4
WE
10
11
&
12 400 mil TSOP II
23
22
21
DQ6
DQ5
A8
A16 13
20 A9
A15 14
19 A10
A14 15
18 A11
A13 16
17 A12
Packages J, TP, and SJ
Fine Pitch BGA 128K x 8-Bump Configuration
123456
Pin Descriptions
Symbol
A0A16
DQ1DQ8
CE
WE
OE
VDD
VSS
NC
Description
Address input
Data input/output
Chip enable input
Write enable input
Output enable input
+3.3 V power supply
Ground
No connect
A NC OE A2 A6 A7 NC
B DQ1 NC A1 A5 CE DQ8
C DQ2 NC A0 A4 NC DQ7
D VSS NC NC A3 NC VDD
E VDD NC NC NC NC VSS
F DQ3 NC A14 A11 DQ5 DQ6
G DQ4 NC A15 A12 WE A8
H NC A10 A16 A13 A9 NC
Package U
6 mm x 8 mm, 0.75 mm Bump Pitch
Top View
Rev: 1.04a 10/2002
1/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.

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GS71108ASJ-8I equivalent
AC Test Conditions
Parameter
Conditions
Input high level
Input low level
Input rise time
Input fall time
Input reference level
Output reference level
Output load
VIH = 2.4 V
VIL = 0.4 V
tr = 1 V/ns
tf = 1 V/ns
1.4 V
1.4 V
Fig. 1& 2
Note:
1. Include scope and jig capacitance.
2. Test conditions as specified with output loading as shown in Fig. 1
unless otherwise noted.
3. Output load 2 for tLZ, tHZ, tOLZ and tOHZ
GS71108ATP/J/SJ/U
Output Load 1
DQ
5030pF1
VT = 1.4 V
Output Load 2
3.3 V
DQ 589
5pF1 434
AC Characteristics
Read Cycle
Parameter
Read cycle time
Address access time
Chip enable access time (CE)
Output enable to output valid (OE)
Output hold from address change
Chip enable to output in low Z (CE)
Output enable to output in low Z (OE)
Chip disable to output in High Z (CE)
Output disable to output in High Z (OE)
Symbol
tRC
tAA
tAC
tOE
tOH
tLZ*
tOLZ*
tHZ*
tOHZ*
-7
Min Max
7—
—7
—7
—3
3—
3—
0—
— 3.5
—3
* These parameters are sampled and are not 100% tested
-8
Min Max
8—
—8
—8
— 3.5
3—
3—
0—
—4
— 3.5
-10
Min Max
10 —
— 10
— 10
—4
3—
3—
0—
—5
—4
-12
Min Max
12 —
— 12
— 12
—5
3—
3—
0—
—6
—5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev: 1.04a 10/2002
5/14
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
© 2001, Giga Semiconductor, Inc.


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Featured Datasheets

Part NumberDescriptionMFRS
GS71108ASJ-8The function is 128K x 8 1Mb Asynchronous SRAM. ETCETC
GS71108ASJ-8IThe function is 128K x 8 1Mb Asynchronous SRAM. ETCETC

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