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What is GP801DDM18?

This electronic component, produced by the manufacturer "Dynex Semiconductor", performs the same function as "Hi-Reliability Dual Switch Low VCESAT IGBT Module".


GP801DDM18 Datasheet PDF - Dynex Semiconductor

Part Number GP801DDM18
Description Hi-Reliability Dual Switch Low VCESAT IGBT Module
Manufacturers Dynex Semiconductor 
Logo Dynex Semiconductor Logo 


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GP801DDM18
GP801DDM18
Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module
Replaces October 2000, version DS5292-2.5
DS5292-3.0 January 2001
FEATURES
s Low VCE(SAT)
s 800A Per Switch
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
VCES
VCE(sat)
IC
I
C(PK)
(typ)
(max)
(max)
1800V
2.6V
800A
1600A
APPLICATIONS
s High Reliability
s Motor Controllers
s Traction Drives
s Low Loss System Retrofit
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP801DDM18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP801DDM18
Note: When ordering, please use the complete part number.
12(C2)
2(C2)
7(C1)
4(E2)
1(E1)
11(G2)
10(E2)
3(C1)
5(E1)
6(G1)
Fig. 1 Dual switch circuit diagram
5
6
7
8
3
9
12
11
10
4
1
2
Outline type code: D
(See Package Details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10

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GP801DDM18 equivalent
GP801DDM18
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
1600
1400
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
1000
900
800
Tcase = 125˚C
VGE = ±15V
VCE = 800V
Rg = 2.2 Ohm
700
600 EOFF
500
EON
400
300
200 EREC
100
0
0 100 200 300 400 500 600 700 800
Collector current, IC - (A)
Fig.5 Typical switching energy vs collector current
1400
1200
Tcase = 125˚C
VGE = ±15V
VCE = 900V
IC = 800A
1000
800
EOFF
EON
600
400
200 EREC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, RG - (Ohms)
Fig.6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10


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Featured Datasheets

Part NumberDescriptionMFRS
GP801DDM18The function is Hi-Reliability Dual Switch Low VCESAT IGBT Module. Dynex SemiconductorDynex Semiconductor

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