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Datasheet GP801DCM18 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GP801DCM18 | Hi-Reliability Chopper Switch Low VCESAT IGBT Module GP801DCM18
GP801DCM18
Hi-Reliability Chopper Switch Low VCE(SAT) IGBT Module
DS5365-3.0 January 2001
FEATURES
s s s s s
Low VCE(SAT) 800A Per Module High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) I |  Dynex Semiconductor | igbt |
GP8 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GP800DCM18 | Hi-Reliability Chopper Switch IGBT Module GP800DCM18
GP800DCM18
Hi-Reliability Chopper Switch IGBT Module
DS5363-3.0 January 2001
FEATURES
s s s s
High Thermal Cycling Capability 800A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 800A 1600A Dynex Semiconductor igbt | | |
| 2 | GP800DCS18 | Chopper Switch IGBT Module GP800DCS18
GP800DCS18
Chopper Switch IGBT Module
Replaces November 2000 version, DS5221-4.0 DS5221-5.0 January 2001
FEATURES
s s s s s
Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Module
KEY PARAMETERS VC Dynex Semiconductor igbt | | |
| 3 | GP800DDM12 | Hi-Reliability Dual Switch IGBT Module Advance Information GP800DDM12
GP800DDM12
Hi-Reliability Dual Switch IGBT Module Advance Information
Replaces May 2000 version, DS5291-1.3 DS5291-2.0 October 2000
FEATURES
s s s s
High Thermal Cycling Capability 800A Per Switch Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ Dynex Semiconductor igbt | | |
| 4 | GP800DDM18 | Hi-Reliability Dual Switch IGBT Module Advance Information GP800DDM18
GP800DDM18
Hi-Reliability Dual Switch IGBT Module Advance Information
Replaces October 2000 version, DS5364-2.0 DS5364-3.0 January 2001
FEATURES
s s s s
High Thermal Cycling Capability 800A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES Dynex Semiconductor igbt | | |
| 5 | GP800DDS12 | Powerline N-Channel Dual Switch IGBT Module GP800DDS12
GP800DDS12
Powerline N-Channel Dual Switch IGBT Module
Replaces October 1999 version, DS5172-3.0 DS5172-4.0 January 2000
The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power loss, the module is s Dynex Semiconductor igbt | | |
| 6 | GP800DDS18 | Dual Switch IGBT Module GP800DDS18
GP800DDS18
Dual Switch IGBT Module
Replaces October 2000 version, DS5165-4.2 DS5165-5.0 January 2001
FEATURES
s s s s s
Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Arm
KEY PARAMETERS VCES (typ Dynex Semiconductor igbt | | |
| 7 | GP800FSM18 | Hi-Reliability Single Switch IGBT Module GP800FSM18
GP800FSM18
Hi-Reliability Single Switch IGBT Module
DS5402-1.1 January 2001
FEATURES
s s s s
High Thermal Cycling Capability 800A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 800A 1600A
Dynex Semiconductor igbt | |
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