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PDF GP800NSS33 Data sheet ( Hoja de datos )
| Número de pieza | GP800NSS33 | |
| Descripción | Single Switch IGBT Module Preliminary Information | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
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GP800NSS33
Replaces February 2000 version, DS5358-2.0
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate with AL O Substrate
23
s Low Inductance Internal Construction
GP800NSS33
Single Switch IGBT Module
Preliminary Information
DS5358-2.1 March 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
3300V
3.6V
800A
1600A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
Aux C
External connection
C1 C2
The Powerline range of high power modules includes dual,
half bridge and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP800NSS33 is a single switch 3300V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP800NSS33
Note: When ordering, please use the whole part number.
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
C1
E1
E2
G
E2
C1
C2
E2 - Aux Emitter
C1 - Aux Collector
Outline type code: N
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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1 page  
GP800NSS33
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
Tcase = 25˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
1600
1400
Common emitter
Tcase = 125˚C
Vge = 20/15/12/10V
1200
1000
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig.4 Typical output characteristics
1600
1400
1200
1000
Tj = 25˚C
Tj = 125˚C
800
600
400
200
0
1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, VF - (V)
Fig.5 Diode typical forward characteristics
1800
1600
1400
1200
1000
800
600
400 Tcase = 125˚C
Vge = ±15V
200
Rg(ON) = 3.3Ω
Rg(OFF) = 6.8Ω
CGE = 440nF
0
0 500 1000 1500 2000 2500 3000
Collector-emitter voltage, Vce - (V)
3500
Fig.6 Reverse bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet GP800NSS33.PDF ] | |
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